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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Nogawa; Shuichi
Address:
Kyoto, JP
No. of patents:
5
Patents:












Patent Number Title Of Patent Date Issued
5431794 Process for forming metal films by plasma sputtering July 11, 1995
A metal film high in reflectivity and excellent in adhesion to a synthetic resin substrate even in the case where the metal film is sufficiently thin, is formed on a surface of the substrate by sputtering a metal target by ions through an inert gas plasma in a vacuum vessel, wherein the
5283095 Optical recording medium comprising (1,1,1) aluminum February 1, 1994
A metal film high in reflectivity and excellent in adhesion to a synthetic resin substrate even in the case where the metal film is sufficiently thin, is formed on a surface of the substrate by sputtering a metal target through an inert gas ion beam drawn out of an ion source in a vacuum
5107170 Ion source having auxillary ion chamber April 21, 1992
An ion source having an auxiliary plasma chamber and a main plasma chamber. The auxiliary plasma chamber receives an ionizable gas and is provided with microwaves with sufficient power to create a high frequency discharge and generate a subplasma for sustaining the creation of an ion pla
4920094 Process for producing superconducting thin films April 24, 1990
A process for producing a superconducting thin film on a surface of a substrate of the present invention comprises the steps of: sputttering a target made of a group IIIa metal and/or an oxide thereof, a group IIa metal and/or an oxide thereof and copper and/or an oxide theref with an
4861750 Process for producing superconducting thin film August 29, 1989
A process for producing a superconducting thin film of the present invention comprises: supplying onto a substrate a group IIa metal and/or an oxide thereof, a group IIIa metal and/or an oxide thereof, and copper and/or an oxide thereof; and irradiating the substrate with an oxygen n










 
 
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