| Patent Number |
Title Of Patent |
Date Issued |
| 7554156 |
Semiconductor device having a field effect transistor using a high dielectric constant gate insu |
June 30, 2009 |
| In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the hi |
| 6955973 |
Method for forming a semiconductor device |
October 18, 2005 |
| A metal film containing a metal is formed on a silicon layer, and then a surface portion of the silicon layer and the metal film are oxidized so as to form a silicon oxide film containing the metal in a surface portion of the silicon layer. |
| 6812101 |
Semiconductor device and method for manufacture thereof |
November 2, 2004 |
| A zirconium silicate layer 103 is formed on a silicon substrate 100, a zirconium oxide layer 102 is also formed on the zirconium silicate layer 103, and the zirconium oxide layer 102 is then removed, thereby forming a gate insulating film 104 made of the zirconium silicate layer 103. |
| 6734451 |
Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor |
May 11, 2004 |
| On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains |
| 6559518 |
MOS heterostructure, semiconductor device with the structure, and method for fabricating the sem |
May 6, 2003 |
| An MOS heterostructure includes: a single crystal silicon substrate; an insulating film formed on the substrate; and a conductive film formed on the insulating film. The substrate includes a plurality of terraces and steps, which have been formed as a result of rearrangement of silicon |
| 6489629 |
Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor |
December 3, 2002 |
| On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains |
| 6177291 |
Method of making aggregate of semiconductor micro-needles |
January 23, 2001 |
| On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon. each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains |
| 6087197 |
Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor |
July 11, 2000 |
| On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains |
| 6033928 |
Method of manufacturing aggregate of semiconductor micro-needles |
March 7, 2000 |
| On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains |
| 5886389 |
Field-effect transistor and method for producing the same |
March 23, 1999 |
| A field-effect transistor includes a semiconductor substrate including a source region, a drain region and a channel region located between the source and drain regions; a gate insulating film formed on at least the channel region of the semiconductor substrate; and a gate electrode form |
| 5296719 |
Quantum device and fabrication method thereof |
March 22, 1994 |
| A quantum wire is formed at the top of triangular protrusion of silicon substrate. A quantum wire is isolated from the substrate by silicon oxide layers. A quantum wire is isolated from the substrate by impurity layers of a conduction type different from that of the substrate. An insulat |
