| Patent Number |
Title Of Patent |
Date Issued |
| 5663582 |
High frequency static induction transistor having high output |
September 2, 1997 |
| A recess-gate type static induction transistor having a high breakdown voltage is provided, which includes an n-type channel region provided over an n.sup.+ -type drain region, p.sup.+ -type elongated gate regions provided in grooves of the channel region, n.sup.+ -type elongated regions |
| 5527733 |
Impurity doping method with adsorbed diffusion source |
June 18, 1996 |
| For effecting impurity doping, a chemically active semiconductor surface is covered with an adsorption layer composed of an impurity element which forms a dopant in the semiconductor or composed of a compound containing the impurity element. Thereafter, solid phase diffusion is effected |
| 5482371 |
Method and apparatus for measuring the dew point and/or frost point of a gas having low water co |
January 9, 1996 |
| A method of determining the dew point of a gas containing a very small amount of water using (1) a reflector mirror the temperature of which can be varied from room temperature down to at least -80.degree. C.; (2) a source of condensed rays of light for irradiating the reflector mirror; |
| 5338389 |
Method of epitaxially growing compound crystal and doping method therein |
August 16, 1994 |
| In a method of epitaxially growing a compound crystal, a plurality of crystal component gasses of a compound and reaction gas chemically reacting with the crystal component gasses are individually directed, in the predetermined order, onto a substrate crystal heated under vacuum. The |
| 5246536 |
Method for growing single crystal thin films of element semiconductor |
September 21, 1993 |
| A method for growing a single crystal thin film of an element semiconductor which comprises repeating the successive operations of feeding a single kind of gas containing the element semiconductor as a component element onto a substrate heated in a growth chamber and then exhausting the |
| 5052818 |
Method of and apparatus for measuring very low water content in gas |
October 1, 1991 |
| An improved method of and an apparatus for measuring a very low water content in a non-condensible gas which has a dew point in the range of from ordinary temperature to -80.degree. C. or less. The gas to be measured is pre-cooled to a temperature slightly higher than that of the dew |
| 5027180 |
Double gate static induction thyristor |
June 25, 1991 |
| A double gate static induction thyristor comprises a semiconductor substrate, a first gate region formed at a first principal surface of the substrate, and a first semiconductor region of a first conduction type formed on the same first principal surface. A second gate region is formed |
| 4975755 |
Optically controllable static induction thyristor device |
December 4, 1990 |
| A semiconductor device comprises a static induction thyristor and a photosensitive element connected to a gate of the static induction thyristor so that the static induction thyristor is controlled optically. A plurality of the semiconductor devices are easily connected in series and |
| 4870028 |
Method of making double gate static induction thyristor |
September 26, 1989 |
| A double gate static induction thyristor comprises an n.sup.- semiconductor substrate having first and second principal surfaces opposite to each other. An n.sup.- epitaxial semiconductor layer is formed on the first principal surface of the substrate, and a p.sup.- epitaxial semico |
| 4837608 |
Double gate static induction thyristor and method for manufacturing the same |
June 6, 1989 |
| A double gate static induction thyristor comprises an n.sup.- semiconductor substrate having first and second principal surfaces opposite to each other. An n.sup.- epitaxial semiconductor layer is formed on the first principal surface of the substrate, and a p.sup.- epitaxial semiconduct |
| 4816891 |
Optically controllable static induction thyristor device |
March 28, 1989 |
| A semiconductor device comprises a static induction thyristor and a photosensitive element connected to a gate of the static induction thyristor so that the static induction thyristor is controlled optically. A plurality of the semiconductor devices are easily connected in series and |
| 4692789 |
Semiconductor apparatus |
September 8, 1987 |
| In a semiconductor apparatus for controlling a large current at a high speed, a lead conductor coupled to a control electrode of a semiconductor device sealed in a package comprises a conductor plate having a width equal to or greater than one side or a diameter of the semiconductor |
| 4673961 |
Pressurized contact type double gate static induction thyristor |
June 16, 1987 |
| A pressurized contact type double gate static induction thyristor comprising a semiconductor body located in a casing and having cathode electrodes and a first gate electrode at one principal surface side thereof and anode electrodes and a second gate electrode at the other principal |
| 4660062 |
Insulated gate transistor having reduced channel length |
April 21, 1987 |
| An insulated gate transistor including a semiconductor substrate, high impurity source and drain regions formed above a channel region of low conductivity, a high impurity concentration region having a conductivity type opposite to that of the source region, a gate insulating layer e |
| 4644386 |
Integrated circuit employing insulated gate electrostatic induction transistor |
February 17, 1987 |
| An insulated gate electrostatic induction transistor and an integrated circuit employing such an insulating gate electrostatic induction transistor as a drive transistor. A highly resistive channel region is provided on a semiconductor substrate of higher conductivity. A highly doped |
| 4603420 |
Optical integrated circuit |
July 29, 1986 |
| A semiconductor laser suitable for incorporation into integrated circuits by providing the laser device with a short resonator dimensioned so as to restrict the power consumption of the device to about 1 mW or less. This is made possible by improving the optical confinement, carrier conf |
| 4558660 |
Semiconductor fabricating apparatus |
December 17, 1985 |
| A semiconductor fabricating apparatus is capable of fabricating a high quality semiconductor with utilization of crystal growth, thermal oxidation of CVD membrane growth at low temperature. The semiconductor fabricating apparatus includes a reaction chamber having a gas inlet and a g |
| 4534033 |
Three terminal semiconductor laser |
August 6, 1985 |
| A semiconductor laser includes an anode region of a first conductivity type made of a highly doped region, an active layer adjacent the anode region, a channel region made of a high-resistivity region and adjacent the active layer, a cathode region of a second conductivity type at one en |
| 4450468 |
Gallium arsenide ISL gate with punched-through bipolar driver transistor |
May 22, 1984 |
| A gallium arsenide semiconductor integrated circuit having a driver transistor constructed as a normally-configured bipolar mode static induction transistor having an n.sup.+ source region provided in a main or outer surface thereof and having an n.sup.+ buried region which serves as |
