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Inventor:
Nishiura; Takayuki
Address:
Itami, JP
No. of patents:
15
Patents:












Patent Number Title Of Patent Date Issued
8192543 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semic June 5, 2012
A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal whil
8177911 Damage evaluation method of compound semiconductor member, production method of compound semicon May 15, 2012
A method of evaluating damage of a compound semiconductor member, comprising: a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a half wid
8133815 Method of polishing compound semiconductor substrate, compound semiconductor substrate, method o March 13, 2012
Compound-semiconductor-substrate polishing methods, compound semiconductor substrates, compound-semiconductor-epitaxial-substrate manufacturing methods, and compound semiconductor epitaxial substrates whereby oxygen superficially present on the substrates reduced. A compound semicond
8115927 Production method of compound semiconductor member February 14, 2012
A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a sp
8044493 GaAs semiconductor substrate for group III-V compound semiconductor device October 25, 2011
A GaAs semiconductor substrate includes a main surface (10m) having an inclined angle of 6.degree. to 16.degree. with respect to a (100) plane (10a), and a concentration of chlorine atoms on the main surface (10m) is not more than 1.times.10.sup.13 cm.sup.-2. Further, a method of man
7960284 III-V compound semiconductor substrate manufacturing method June 14, 2011
Affords a III-V compound semiconductor substrate manufacturing method that enables enhancement of the substrate PL intensity. In such a III-V compound semiconductor substrate manufacturing method, first, the surface 3a of a wafer 3 is polished (polishing step). Second, the surface 3a of
7854804 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semic December 21, 2010
A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal whil
7851381 Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substra December 14, 2010
A surface treatment method for a nitride crystal is a surface treatment method of chemically and mechanically polishing a surface of the nitride crystal. Oxide abrasive grains are used. The abrasive grains have a standard free energy of formation of at least -850 kJ/mol as a converted
7737043 Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface June 15, 2010
There are provided an inspection method of a compound semiconductor substrate that can have the amount of impurities at the surface of the compound semiconductor substrate reduced, a compound semiconductor substrate, a surface treatment method of a compound semiconductor substrate, a
7713844 Nitride semiconductor substrate, and method for working nitride semiconductor substrate May 11, 2010
A method for working a nitride semiconductor substrate, comprising the steps of: preparing a disk-shaped nitride semiconductor substrate comprising a plurality of striped regions having defect concentration regions in which crystal defect density is higher than in surrounding low def
7619301 GaAs semiconductor substrate and fabrication method thereof November 17, 2009
A GaAs semiconductor substrate includes a surface layer. When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10.degree. for the photoelectron take-off angle .theta. by X-ray photoelectron spectroscopy, the struct
7569493 Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of pro August 4, 2009
There is provided a cleaning method and production method that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. A method of cleaning a nitride-based compound semiconductor in accordance with the present
7507668 Polishing slurry, method of treating surface of Ga.sub.xIn.sub.1-xAs.sub.yP.sub.1-y crystal and March 24, 2009
The present polishing slurry is a polishing slurry for chemically mechanically polishing a surface of a Ga.sub.xIn.sub.1-xAs.sub.yP.sub.1-y crystal (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1), characterized in that this polishing slurry contains abrasive grains formed of SiO.sub.2, this
7432186 Method of surface treating substrates and method of manufacturing III-V compound semiconductors October 7, 2008
Affords methods of surface treating a substrate and of manufacturing Group III-V compound semiconductors, in which a substrate made of a Group III-V semiconductor compound is rendered stoichiometric, and microscopic roughness on the surface following epitaxial growth is reduced. The
7416604 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semic August 26, 2008
A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal whil










 
 
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