| Patent Number |
Title Of Patent |
Date Issued |
| 8192543 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semic |
June 5, 2012 |
| A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal whil |
| 8177911 |
Damage evaluation method of compound semiconductor member, production method of compound semicon |
May 15, 2012 |
| A method of evaluating damage of a compound semiconductor member, comprising: a step of performing measurement of photoluminescence on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a half wid |
| 8133815 |
Method of polishing compound semiconductor substrate, compound semiconductor substrate, method o |
March 13, 2012 |
| Compound-semiconductor-substrate polishing methods, compound semiconductor substrates, compound-semiconductor-epitaxial-substrate manufacturing methods, and compound semiconductor epitaxial substrates whereby oxygen superficially present on the substrates reduced. A compound semicond |
| 8115927 |
Production method of compound semiconductor member |
February 14, 2012 |
| A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a sp |
| 8044493 |
GaAs semiconductor substrate for group III-V compound semiconductor device |
October 25, 2011 |
| A GaAs semiconductor substrate includes a main surface (10m) having an inclined angle of 6.degree. to 16.degree. with respect to a (100) plane (10a), and a concentration of chlorine atoms on the main surface (10m) is not more than 1.times.10.sup.13 cm.sup.-2. Further, a method of man |
| 7960284 |
III-V compound semiconductor substrate manufacturing method |
June 14, 2011 |
| Affords a III-V compound semiconductor substrate manufacturing method that enables enhancement of the substrate PL intensity. In such a III-V compound semiconductor substrate manufacturing method, first, the surface 3a of a wafer 3 is polished (polishing step). Second, the surface 3a of |
| 7854804 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semic |
December 21, 2010 |
| A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal whil |
| 7851381 |
Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substra |
December 14, 2010 |
| A surface treatment method for a nitride crystal is a surface treatment method of chemically and mechanically polishing a surface of the nitride crystal. Oxide abrasive grains are used. The abrasive grains have a standard free energy of formation of at least -850 kJ/mol as a converted |
| 7737043 |
Inspection method of compound semiconductor substrate, compound semiconductor substrate, surface |
June 15, 2010 |
| There are provided an inspection method of a compound semiconductor substrate that can have the amount of impurities at the surface of the compound semiconductor substrate reduced, a compound semiconductor substrate, a surface treatment method of a compound semiconductor substrate, a |
| 7713844 |
Nitride semiconductor substrate, and method for working nitride semiconductor substrate |
May 11, 2010 |
| A method for working a nitride semiconductor substrate, comprising the steps of: preparing a disk-shaped nitride semiconductor substrate comprising a plurality of striped regions having defect concentration regions in which crystal defect density is higher than in surrounding low def |
| 7619301 |
GaAs semiconductor substrate and fabrication method thereof |
November 17, 2009 |
| A GaAs semiconductor substrate includes a surface layer. When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10.degree. for the photoelectron take-off angle .theta. by X-ray photoelectron spectroscopy, the struct |
| 7569493 |
Nitride-based compound semiconductor, method of cleaning a compound semiconductor, method of pro |
August 4, 2009 |
| There is provided a cleaning method and production method that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. A method of cleaning a nitride-based compound semiconductor in accordance with the present |
| 7507668 |
Polishing slurry, method of treating surface of Ga.sub.xIn.sub.1-xAs.sub.yP.sub.1-y crystal and |
March 24, 2009 |
| The present polishing slurry is a polishing slurry for chemically mechanically polishing a surface of a Ga.sub.xIn.sub.1-xAs.sub.yP.sub.1-y crystal (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1), characterized in that this polishing slurry contains abrasive grains formed of SiO.sub.2, this |
| 7432186 |
Method of surface treating substrates and method of manufacturing III-V compound semiconductors |
October 7, 2008 |
| Affords methods of surface treating a substrate and of manufacturing Group III-V compound semiconductors, in which a substrate made of a Group III-V semiconductor compound is rendered stoichiometric, and microscopic roughness on the surface following epitaxial growth is reduced. The |
| 7416604 |
Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semic |
August 26, 2008 |
| A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal whil |
