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Nishimori; Yasuhiro
Hikari, JP
No. of patents:

Patent Number Title Of Patent Date Issued
8277563 Plasma processing method October 2, 2012
The invention provides a plasma processing method which includes (i) feeding a transferring gas which decreases a pressure difference between a processing chamber and a transfer chamber in order to prevent particles from adhering a processing sample, to be processed, passed to the pr
8114244 Method for etching a sample February 14, 2012
The invention provides a method for performing mass production processing of etching a sample capable of maintaining a stable processing profile. The method for performing mass production processing of etching for subjecting a wafer carried into a vacuum processing reactor to plasma
8075733 Plasma processing apparatus December 13, 2011
A plasma processing apparatus includes: a decompression chamber of which the inside is depressed; a gas supply unit that supplies process gas into said chamber; a microwave supply unit that supplies a microwave into the chamber to generate plasma; an object-placing electrode where a
7909933 Plasma processing method March 22, 2011
The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and

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