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Inventor:
Nishi; Tsunehiro
Address:
Joetsu, JP
No. of patents:
16
Patents:












Patent Number Title Of Patent Date Issued
8247166 Double patterning process August 21, 2012
A double pattern is formed by coating a first positive resist composition onto a substrate, patternwise exposure to radiation, and development with alkaline developer to form a first resist pattern; applying heat and/or radiation to render the first resist pattern insoluble in a second
8129099 Double patterning process March 6, 2012
Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PE
8062831 Carboxyl-containing lactone compound, polymer, resist composition, and patterning process November 22, 2011
Carboxyl-containing lactone compounds having formula (1) are novel wherein R.sup.1 is H, F, methyl or trifluoromethyl, R.sup.2 and R.sup.3 are H or monovalent hydrocarbon groups, or R.sup.2 and R.sup.3 may together form an aliphatic ring, W is CH.sub.2, O or S, k.sup.1 is an integer
7985528 Positive resist composition and patterning process July 26, 2011
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1)
7981589 Fluorinated monomer, fluorinated polymer, resist composition and patterning process July 19, 2011
Fluorinated monomers of formula (1) are useful in producing polymers for the formulation of radiation-sensitive resist compositions. R.sup.1 is H or monovalent C.sub.1-C.sub.20 hydrocarbon group, R.sup.2 is H, F, methyl or trifluoromethyl, R.sup.3 and R.sup.4 are H or a monovalent C.
7868199 Fluoroalcohol preparation method, fluorinated monomer, polymer, resist composition and patternin January 11, 2011
Fluoroalcohol compounds of formula (4) are prepared by reacting a fluorine compound of formula (1) with reducing agents or organometallic reagents of formulas (2) and (3) wherein R.sup.1 is H or a monovalent C.sub.1-C.sub.20 hydrocarbon group in which any --CH.sub.2-- moiety may be r
7833694 Lactone-containing compound, polymer, resist composition, and patterning process November 16, 2010
Lactone-containing compounds having formula (1) are novel wherein R.sup.1 is H, F, methyl or trifluoromethyl, R.sup.2 and R.sup.3 are H or monovalent hydrocarbon groups, or R.sup.2 and R.sup.3 may together form an aliphatic hydrocarbon ring, R.sup.4 is H or CO.sub.2R.sup.5, R.sup.5 i
7727704 Positive resist compositions and patterning process June 1, 2010
In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R.sup.1 is H, methyl or trifluoromethyl, R.sup.2 and R.sup.3 are
7718342 Polymers, resist compositions and patterning process May 18, 2010
A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R.sup.1, R.sup.3, R.
7691561 Positive resist compositions and patterning process April 6, 2010
In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R.sup.1 is H, methyl or trifluoromethyl, R.sup.2 and R.sup.3 are
7638260 Positive resist compositions and patterning process December 29, 2009
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units. When processed by ArF lithography, the composition is im
7618765 Positive resist composition and patterning process November 17, 2009
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator which is a specific sulfonium salt compound. The resin (A) is a polymer comprising tertiary alkyl protective group units
7618764 Positive resist compositions and patterning process November 17, 2009
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units. The acid generator (B) is a specific sulfonium salt comp
7611821 Positive resist compositions and patterning process November 3, 2009
A positive resist composition is provided comprising (A) a resin component having a carboxylic acid moiety protected with an acetal protective group which is decomposable under the action of an acid, wherein in the carboxylic acid moiety protected with an acetal protective group, dep
7598015 Polymer, resist composition and patterning process October 6, 2009
A (meth)acrylic copolymer is endowed with a good profile of rigidity and hydrophilicity by introducing not only polycyclic structure units, but also recurring units having a high polarity. A chemically amplified positive resist composition comprising the polymer has a high sensitivit
7541133 Positive resist composition and patterning process June 2, 2009
A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator. The resin (A) is a polymer comprising tertiary alkyl protective group units having a hydrophobic tetracyclo[4.4.0.1.sup










 
 
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