| Patent Number |
Title Of Patent |
Date Issued |
| 5892279 |
Packaging for electronic power devices and applications using the packaging |
April 6, 1999 |
| A packaging for high-power devices such as Insulated Gate Bipolar Transistors includes a direct bonded copper substrate (DBC), such as beryllium oxide (BeO), soldered directly to a heat generating surface of the high-power device. The direct bonded copper substrate (DBC) is, in turn, |
| 5831409 |
Electric vehicle propulsion system employing AC induction motor control |
November 3, 1998 |
| An electric vehicle propulsion system having a motor with first and second electrically isolated windings and a system control unit for controlling the motor, wherein the system control unit includes a first power bridge for driving the first windings and a second power bridge for drivin |
| 5504378 |
Direct cooled switching module for electric vehicle propulsion system |
April 2, 1996 |
| An apparatus for cooling a switching circuit for an electric vehicle, wherein the switching circuit has at least two switching elements connected in series, includes first and second heat sinks, each having two thermally-conductive planar members forming a passage therebetween for ch |
| 5463252 |
Modular solid state relay |
October 31, 1995 |
| A solid state circuit breaker utilizing fast acting solid state relays which are made up of individual switching circuit modules using silicon metal oxide semiconductor field effect transistors or silicon carbide metal oxide semiconductor field effect transistors. Depending on the power |
| 5463250 |
Semiconductor component package |
October 31, 1995 |
| A package for power semiconductor components permitting high thermal dissipation and current conductance and including a frame assembly bonded to a substrate on which a power semiconductor chip is mounted. The frame assembly has a wirebonding grid for connecting short, uniform length |
| 5283463 |
High power self commutating semiconductor switch |
February 1, 1994 |
| In one embodiment, the invention is a packaged high power electronic switch in the form of a semiconductor chip having metalized planar cathode and anode terminals and a gate terminal. A refractory annular ring has planar open end faces and side walls having stepped portions. A pair of t |
| 5057648 |
High voltage hybrid package |
October 15, 1991 |
| A package for a heat generating, high voltage hybrid circuit is disclosed which comprises a package housing having a sidewall structure formed from an electrically insulative, thermally conductive ceramic material that obviates the need for using separate insulator structures between the |
