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Nguyen; Huong
Danville, CA
No. of patents:

Patent Number Title Of Patent Date Issued
6626185 Method of depositing a silicon containing layer on a semiconductor substrate September 30, 2003
A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a R
6270862 Method for high density plasma chemical vapor deposition of dielectric films August 7, 2001
A plasma processing system for processes such as chemical vapor deposition includes a plasma processing chamber, a substrate holder for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate holder, the dielectric member
6184158 Inductively coupled plasma CVD February 6, 2001
A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films havi
5835334 Variable high temperature chuck for high density plasma chemical vapor deposition November 10, 1998
An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements at

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