| Patent Number |
Title Of Patent |
Date Issued |
| 6626185 |
Method of depositing a silicon containing layer on a semiconductor substrate |
September 30, 2003 |
| A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the cleaning gas to an inductive field generated by resonating a radio frequency current in a R |
| 6270862 |
Method for high density plasma chemical vapor deposition of dielectric films |
August 7, 2001 |
| A plasma processing system for processes such as chemical vapor deposition includes a plasma processing chamber, a substrate holder for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate holder, the dielectric member |
| 6184158 |
Inductively coupled plasma CVD |
February 6, 2001 |
| A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films havi |
| 5835334 |
Variable high temperature chuck for high density plasma chemical vapor deposition |
November 10, 1998 |
| An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements at |
