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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Nemoto; Michio
Address:
Nagano, JP
No. of patents:
12
Patents:












Patent Number Title Of Patent Date Issued
8178941 Semiconductor device May 15, 2012
In a semiconductor device having a pn-junction diode structure that includes anode diffusion region including edge area, anode electrode on anode diffusion region, and insulator film on edge area of anode diffusion region, the area of anode electrode above anode diffusion region with
7638368 Reverse blocking semiconductor device and a method for manufacturing the same December 29, 2009
A reverse blocking semiconductor device that shows no adverse effect of an isolation region on reverse recovery peak current, that has a breakdown withstanding structure exhibiting satisfactory soft recovery, that suppresses aggravation of reverse leakage current, which essentially a
7572683 Semiconductor device, the method of manufacturing the same, and two-way switching device using t August 11, 2009
A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the semiconductor devices is provided, and a method of manufacturing the semiconductor devi
7358127 Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof April 15, 2008
Impurity concentration (N.sub.d(X)) in an n-drift layer in a diode is at a maximum at a position at a distance Xp from an anode electrode in a direction from the anode electrode to a cathode electrode, and gradually decreases from the position toward each of the anode electrode and the
7307330 Reverse blocking semiconductor device and a method for manufacturing the same December 11, 2007
A reverse blocking semiconductor device that shows no adverse effect of an isolation region on reverse recovery peak current, that has a breakdown withstanding structure exhibiting satisfactory soft recovery, that suppresses aggravation of reverse leakage current, which essentially a
7157785 Semiconductor device, the method of manufacturing the same, and two-way switching device using t January 2, 2007
A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the semiconductor devices is provided, and a method of manufacturing the semiconductor devi
7091579 Power semiconductor rectifier having broad buffer structure and method of manufacturing thereof August 15, 2006
Impurity concentration (N.sub.d(X)) in an n-drift layer in a diode is at a maximum at a position at a distance Xp from an anode electrode in a direction from the anode electrode to a cathode electrode, and gradually decreases from the position toward each of the anode electrode and the
7049674 Reverse blocking semiconductor device and a method for manufacturing the same May 23, 2006
A reverse blocking semiconductor device that shows no adverse effect of an isolation region on reverse recovery peak current, that has a breakdown withstanding structure exhibiting satisfactory soft recovery, that suppresses aggravation of reverse leakage current, which essentially a
6870199 Semiconductor device having an electrode overlaps a short carrier lifetime region March 22, 2005
A semiconductor device that helps to prevent the occurrence of current localization in the vicinity of an electrode edge and improves the reverse-recovery withstanding capability. The semiconductor device according to the invention includes a first carrier lifetime region, in which t
6791121 Semiconductor device and method of manufacturing the same September 14, 2004
A semiconductor device, such as a pin diode, includes a first drift layer, a second drift layer, an anode layer on the first drift layer, and a buffer layer formed between the first and second drift layers. The shortest distance from the pn-junction between the anode layer and the bu
6670650 Power semiconductor rectifier with ring-shaped trenches December 30, 2003
A high-speed, soft-recovery semiconductor device that reduces leakage current by increasing the Schottky ratio of Schottky contacts to pn junctions. In one embodiment of the present invention, an n.sup.- drift layer is formed on an n.sup.+ cathode layer 1 by epitaxial growth, and rin
6465874 Power semiconductor rectifier having schottky contact combined with insulation film October 15, 2002
A semiconductor device has improved reverse recovery characteristics and has greatly reduced the leakage current caused during application of a reverse bias voltage. The semiconductor device according to the invention includes a semiconductor chip having a first major surface and a secon










 
 
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