| Patent Number |
Title Of Patent |
Date Issued |
| 7618494 |
Substrate holding structure and substrate processing device |
November 17, 2009 |
| The object of the present invention is to prevent damage due to thermal stress induced into a substrate holding table in a substrate holding structure for holding a substrate to be processed. In the substrate holding structure having the substrate holding table arranged at the top of |
| 7576303 |
Wafer holder, and wafer prober provided therewith |
August 18, 2009 |
| A wafer holder is provided having high rigidity and an enhanced heat-insulating effect that allow positional accuracy and heating uniformity to be improved, a chip to be rapidly heated and cooled, and the manufacturing cost to be reduced, and a wafer prober apparatus on which the waf |
| 7554059 |
Heater unit and semiconductor manufacturing apparatus including the same |
June 30, 2009 |
| A ceramic heater attaining more uniform temperature distribution from the start to the end of cooling is provided. Further, in a cooling module used for cooling the heater, liquid leakage during use is prevented, degradation in cooling capability is prevented and the performance is m |
| 7495460 |
Body for keeping a wafer, heater unit and wafer prober |
February 24, 2009 |
| A wafer holding body used for a wafer prober for testing a semiconductor wafer includes a chuck top having a conductive layer on a surface thereof and a support body supporting the chuck top. The support body has a base portion opposing the chuck top and a side portion extending from the |
| 7425838 |
Body for keeping a wafer and wafer prober using the same |
September 16, 2008 |
| According to the invention, there is provided a wafer holding member for use in a wafer prober for inspecting a semiconductor wafer, including a chuck top and a supporting member for supporting the chuck top, wherein the supporting member has a bottom portion facing to the chuck top, a |
| 7414823 |
Holder for use in semiconductor or liquid-crystal manufacturing device and semiconductor or liqu |
August 19, 2008 |
| Affords a holder for use in semiconductor or liquid-crystal manufacturing devices--as well as semiconductor or liquid-crystal manufacturing devices in which the holder is installed--in which temperature uniformity in the processed-object retaining face is heightened. Configuring the hold |
| 7408131 |
Wafer holder and semiconductor manufacturing apparatus |
August 5, 2008 |
| A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suitable for processing |
| 7394043 |
Ceramic susceptor |
July 1, 2008 |
| Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is |
| 7361230 |
Substrate processing apparatus |
April 22, 2008 |
| In the substrate processing apparatus, a ceramic module for mounting a substrate has a flat plate portion having an electric circuitry and a ceramic base body, and as at least a part of a surface of the flat plate portion other than the surface mounting the substrate is in contact with |
| 7342204 |
Heater and heating device |
March 11, 2008 |
| A low-radiation-rate film, made of a material whose radiation rate is lower than that of a heater substrate, is formed at least entirely over the surface of a heat-subject-placing surface of a heater substrate. By applying patterning to the low-radiation-rate film, the exposure rate of |
| 7341969 |
Aluminum nitride sintered body |
March 11, 2008 |
| The object of the present invention is to provide a susceptor with superior thermal uniformity by minimizing pores in an aluminum nitride sintered body.In an aluminum nitride sintered body according to the present invention, the tin content and sulfur content are controlled so that t |
| 7306858 |
Aluminum nitride sintered body |
December 11, 2007 |
| In an aluminum nitride sintered body, the bismuth and chlorine contents are restricted to be no more than fixed amounts. More specifically, in an aluminum nitride sintered body having aluminum nitride as its main component, the bismuth content in the aluminum nitride sintered body is |
| 7279048 |
Semiconductor manufacturing apparatus |
October 9, 2007 |
| To provide a semiconductor manufacturing device, which is provided with a wafer holder capable of improving the cooling rate of a heater and retaining the homogeneity of the temperature distribution of the heater at cooling time and which can markedly shorten the time period for trea |
| 7268321 |
Wafer holder and semiconductor manufacturing apparatus |
September 11, 2007 |
| A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suitable for processing |
| 7211153 |
Ceramic joined body, substrate holding structure and substrate processing apparatus |
May 1, 2007 |
| A substrate holding structure having excellent corrosion resistance and airtightness, excellent dimensional accuracy and sufficient durability when mechanical or thermal stress is applied thereto is obtained. A holder (1) serving as the substrate holding structure includes a ceramic |
| 7177536 |
Fluid heating heater |
February 13, 2007 |
| The invention provides a fluid heater in which the efficiency of heat transfer to a fluid is improved, downsizing of the heater itself can be achieved, and the rise time until warm water heated to a necessary temperature is supplied is shortened, which results in reduction of the pow |
| 7090423 |
Connecting structures |
August 15, 2006 |
| Joint formations that, in joining together joining members employed in a variety of electrical and electronic components, yield sufficiently high joint strength in the direction perpendicular to the plane in which two joining members join, and meanwhile in the direction parallel to the |
| 7090394 |
Temperature gauge and ceramic susceptor in which it is utilized |
August 15, 2006 |
| Temperature gauge, and ceramic susceptors and semiconductor manufacturing equipment utilizing the temperature gauge, in which the thermocouple may be easily replaced even if damaged, and in which heat from the temperature-gauging site is readily transmitted to the temperature-gauging |
| 6946625 |
Ceramic susceptor |
September 20, 2005 |
| Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is |
| 6881128 |
Ceramics base plate and method for producing the same |
April 19, 2005 |
| A method of producing ceramics base plates is disclosed, comprising forming a continuous flaw on at least one surface of a ceramics sintered base plate from end to end using a flawing tool and dividing the ceramics sintered base plate along the flaw by applying an external force. It is |
| 6806443 |
Ceramic susceptor |
October 19, 2004 |
| Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is |
| 6770379 |
Susceptor for semiconductor manufacturing equipment and process for producing the same |
August 3, 2004 |
| A susceptor for semiconductor manufacturing equipment obtained by laminating plural aluminum nitride (AlN) ceramic substrates with a high melting point metallic layer and an adhesive layer, and in particular, the aluminum nitride (AlN) ceramic substrate contains a compound of a Group 3a |
| 6716304 |
Wafer holder for semiconductor manufacturing apparatus, and method of manufacturing the wafer ho |
April 6, 2004 |
| A wafer holder for a semiconductor manufacturing apparatus has a high heat conductivity. The wafer holder includes a sintered ceramic piece, a conductive layer such as a heater circuit pattern which can be formed with high precision on at least one surface of the sintered ceramic piece, |
| 6671489 |
Thermal fixing apparatus |
December 30, 2003 |
| In a heating-type toner-fixing unit using a ceramic heater and a cylindrical fixing film, the shape of the fixing face-side surface of a ceramic heater 10 which comes into contact with a fixing film 3 and the shape of the portions of a heater support 12 at least adjacent to the fixin |
| 6664515 |
Circuit pattern of resistance heating elements and substrate-treating apparatus incorporating th |
December 16, 2003 |
| A technology that achieves a highly uniform temperature distribution on the surface of large-area semiconductor wafers and substrates for liquid crystals without prior measurement of the resistance-heating-element circuit and subsequent adjustment of the value of resistance. At least one |
| 6653604 |
Heater member for mounting heating object and substrate processing apparatus using the same |
November 25, 2003 |
| In the heater member for mounting an object of heating, at least a part of a surface other than a surface mounting a substrate such as a semiconductor wafer or a substrate for liquid crystal, is mirror-finished. Accordingly, power fed to the heater for heating to a prescribed tempera |
| 6548787 |
Ceramic heater |
April 15, 2003 |
| A ceramic substrate for a ceramic heater includes aluminum nitride, silicon nitride or silicon carbide as the main component for increasing mechanical strength and improving thermal shock resistance, and a proper additive for controlling thermal conductivity. A temperature gradient from |
| 6508884 |
Wafer holder for semiconductor manufacturing apparatus, method of manufacturing wafer holder, an |
January 21, 2003 |
| A wafer holder for a semiconductor manufacturing apparatus that has a high heat conductivity and includes a conductive layer such as heater circuit pattern which can be formed with a high precision pattern, a method of manufacturing the wafer holder, and a semiconductor manufacturing |
| 6500052 |
Method of polishing a ceramic substrate |
December 31, 2002 |
| The circumferential edge portion of a ductile rotating body containing abrasive grains is used to polish the surface of a ceramic substrate. The angle .theta. formed between the polishing direction D.sub.0 of the ceramic substrate and the rotating direction D.sub.1, of the rotating body |
| 6458444 |
Ceramic substrate and polishing method thereof |
October 1, 2002 |
| The circumferential edge portion of a ductile rotating body containing abrasive grains is used to polish the surface of a ceramic substrate. The angle .theta. formed between the polished direction D.sub.0 of the ceramic substrate and the rotating direction D.sub.1 of the rotating body is |
| 6428741 |
Aluminum nitride sintered body and method of preparing the same |
August 6, 2002 |
| Provided is an aluminum nitride sintered body excellent in thermal shock resistance and strength and applicable to a radiating substrate for a power module or a jig for semiconductor equipment employed under a strict heat cycle. An aluminum nitride sintered body obtained with a sintering |
| 6423400 |
Susceptor for semiconductor manufacturing equipment and process for producing the same |
July 23, 2002 |
| A susceptor for semiconductor manufacturing equipment obtained by laminating plural aluminum nitride (AlN) ceramic substrates with a high melting point metallic layer and an adhesive layer, and in particular, the aluminum nitride (AlN) ceramic substrate contains a compound of a Group 3a |
| 6392197 |
Ceramic heater for toner-fixing units and method for manufacturing the heater |
May 21, 2002 |
| A ceramic heater that is used in a toner-fixing system comprising a ceramic heater and a heat-resistant film, that reduces the degree of deformation of the heat-resistant film, that lightens the load applied to the film at the time of revolution, that prevents the fracture of the film, a |
| 6384378 |
Ceramic heater for toner-fixing units and method for manufacturing the heater |
May 7, 2002 |
| A ceramic heater that is used in a toner-fixing system comprising a ceramic heater and a heat-resistant film, that reduces the degree of deformation of the heat-resistant film, that lightens the load applied to the film at the time of revolution, that prevents the fracture of the film, a |
| 6294275 |
Aluminum-nitride sintered body, method for fabricating the same, and semiconductor substrate com |
September 25, 2001 |
| An aluminum-nitride sintered body that has both high thermal conductivity and high mechanical strength, a fabricating method for the same, and a semiconductor substrate comprising the same. A material powder is prepared by mixing an aluminum-nitride powder, constituting 1 to 95 wt. %, ha |
| 6271163 |
Aluminum nitride sintered body and method of preparing the same |
August 7, 2001 |
| An aluminum nitride sintered body has excellent thermal shock resistance and strength, and is applicable to a radiating substrate for a power module or a jig for semiconductor equipment employed under a strict heat cycle. The aluminum nitride sintered body contains 0.01 to 5 percent by |
| 6174614 |
Sintered aluminum nitride body and metallized substrate prepared therefrom |
January 16, 2001 |
| A sintered aluminum nitride body comprising aluminum nitride as the main component and containing a calcium compound, an ytterbium compound, and a neodymium compound. Due to the use of the above calcium-yttrium-neodymium ternary sintering aid, the sintered aluminum nitride body can be ob |
| 6084221 |
Aluminum nitride heater |
July 4, 2000 |
| A ceramic heater includes a substrate (1) consisting of an aluminum nitride sintered body, and a heating element (2) and a feed electrode (3), mainly composed of silver or a silver alloy, formed on a surface of the substrate (1). The aluminum nitride sintered body contains a group IIa or |
| 6078027 |
Ceramic fixing heater containing silicon nitride |
June 20, 2000 |
| A heater for fixing a toner image suffers no cracking of the ceramics substrate, thereof has a high connection reliability between an electrode and a connector thereof, and capable of attaining an improved fixing speed and a size increase of a transfer material. The heater, which is adap |
