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Nakano; Shoichi
Hirakata, JP
No. of patents:

Patent Number Title Of Patent Date Issued
5200630 Semiconductor device April 6, 1993
A semiconductor device including a semiconducting layer made of polycrystalline silicon, an insulating film provided on an upper face of the semiconducting layer and an electrode provided on an upper face of the insulating film such that channels are formed on the upper face of the s
5045847 Flat display panel September 3, 1991
The invention discloses a novel flat display panel suited for use with computer terminal equipment, television sets, or the like. The flat display panel first confines light in a core layer of a light wave guide, and then diminishes refractive index in part of the core layer by applying
4950900 Heated infrared gas analyzer using a pyroelectric infrared sensor August 21, 1990
An infrared gas analyzer using a pyroelectric infrared sensor, which includes a heating unit for heating the infrared sensor, a heating sensor for detecting its heating temperature and a temperature sensor for detecting the ambient temperature of the infrared sensor, and controls the
4885226 Electrophotographic photosensitive sensor December 5, 1989
An electrophotographic photosensitive sensor comprises a blocking layer, a photoconductive layer and a surface layer made mainly of microcrystalline or amorphous silicon and/or germanium and formed on a conductive substrate. At least one of the layers including the blocking layer, the
4824488 Photovoltaic device April 25, 1989
A transparent conductive film is formed on a glass substrate covering substantially its entire surface area and this transparent conductive film is divided into a plurality of transparent conductive parts per each photoelectric converting region. The photoelectric converting region is of
4799087 Field effect transistor January 17, 1989
A field effect transistor comprises a source electrode, a drain electrode, a channel layer between the source electrode and the drain electrode, a gate electrode for controlling electric current in the channel layer, and a superlattice layer interposed between the channel layer and the g
4670293 Method of making semiconductor film June 2, 1987
A method of making a semiconductor film on a substrate having a non-flat surface, by placing the substrate in a reaction chamber including at least a pair of discharge electrodes, an inlet of a reaction gas for producing a desired semiconductor film, and an outlet for reduced pressure, a

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