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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Nakano; Hirofumi
Address:
Tokyo, JP
No. of patents:
17
Patents:












Patent Number Title Of Patent Date Issued
7391974 Wavelength division multiplexing optical transmission equipment and method of amplifying optical June 24, 2008
Optical signal transmission is improved by reducing the variance in light output level and OSNR by adjusting optical signal intensity and gain tilt, taking SRS influence into consideration.
7194210 Wavelength division multiplexing optical transmission equipment and method of amplifying optical March 20, 2007
Optical signal transmission is improved by reducing the variance in light output level and OSNR by adjusting optical signal intensity and gain tilt, taking SRS influence into consideration.
6603190 Semiconductor device August 5, 2003
A semiconductor device having a plated heat sink (PHS) layer on the back surface, preventing a short circuit between a bonding wire, and a first metal layer. A method of making a semiconductor device including forming a catalyst layer on a bottom of a first separation groove in the front
6515920 Semiconductor data storing circuit device, method of checking the device and method of relieving February 4, 2003
A memory core of a semiconductor data storing circuit device in a semiconductor chip is composed of a memory cell array having memory cells of rows and columns, data input/output circuits of a normal operation in which a data input line and a data output line for one bit of data are
6335265 Method for manufacturing semiconductor device and semiconductor device January 1, 2002
A semiconductor device has a plated heat sink layer on the back surface, preventing a short-circuit between a bonding wire and a first metal layer. A method of making a semiconductor device includes forming a catalyst layer on a bottom of a first separation groove in the front surface of
5869903 Sealed semiconductor device including opposed substrates and metal wall February 9, 1999
A semiconductor device includes a circuit substrate having a first surface on which a high-frequency circuit is located; a first metal layer disposed on a second surface of the circuit substrate; bump wirings on the first surface of the circuit substrate and electrically connected to the
5796132 Semiconductor device August 18, 1998
On a semiconductor substrate with an active layer, a first-stage recess groove is formed by photolithography and wet or dry etching. On the semiconductor substrate and the surface of the first-stage recess groove, a surface passivation film a crystalline material such as i-GaAs or an
5726468 Compound semiconductor bipolar transistor March 10, 1998
A semiconductor device includes a semiconductor substrate; a first active layer disposed on the semiconductor substrate; a second active layer disposed on the first active layer; a first electrode including a lower stage disposed on the second active layer and an upper stage disposed on
5670801 Heterojunction bipolar transistor September 23, 1997
A method of fabricating a semiconductor device includes producing a collector layer, a base layer, and an emitter layer on a semiconductor substrate; producing a dummy emitter electrode on a region of the emitter layer; forming a first resist except where the dummy emitter electrode is
5366966 Compound UCE6 November 22, 1994
A compound represented by formula (I): ##STR1## or a pharmaceutically acceptable salt thereof is provided, which has an excellent antitumor activity.
5189187 Diterpene compound and process for producing the same February 23, 1993
A clerodane-type diterpene derivative, which has antibacterial and antitumor activities, as well as chemically equivalent tautomers thereof and a process for producing said derivative using a microorganism belonging to the genus Streptomyces.
5151352 Process for producing diterpene compounds September 29, 1992
A clerodane-type diterpene derivative, which has antibacterial and antitumor activities, as well as chemically equivalent tautomers thereof and a process for producing said derivative using a microorganism belonging to the genus Streptomyces.
5106868 Epoxycyclohexenone amides with antibacterial activity April 21, 1992
Compounds UCF1 and derivatives thereof exhibit anti-bacterial and anti-tumor activities and may be used for the preparation of anti-bacterial and anti-tumor agents.Compounds UCF1 may be produced by fermentation of a microorganism of the genus Streptomyces capable of producing compounds U
5101038 Novel substance DC 113 and production thereof March 31, 1992
A novel fermentation product, DC113, represented by the formula ##STR1## which has antimicrobial and antitumor activities.
5082857 Chemical compound January 21, 1992
The present invention relates to a compound designated "DC114-C" having excellent anti-bacterial and anti-tumor activities. This compound may be obtained by fermentation of a microorganism of the genus Streptomyces, preferably Streptomyces sp. DO-114 (FERM BP-2641).
4952576 UCY1003 derivatives August 28, 1990
Compounds having analgesic activity which have the formula ##STR1## wherein R.sub.1 -R.sub.6 represent hydrogen or a substituent and X and Y together represent inter alia as epoxyethylene, ethylene halohydrin, haloethylene or a --CH.dbd.CH-group.
4923990 Pyrindamycins A and B and duocarmycin A antibiotics derived from certain streptomyces culture May 8, 1990
The present invention relates to DC-88A and DC-89A1 and their production. These compounds are obtained by fermentation of microorganisms belonging to the genus Streptomyces. These compounds have antibacterial and anti-tumor activities and are useful as medicaments.










 
 
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