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Inventor: Nakamura; Susumu
Address: Higashijou-machi, Nagano-shi, Nagano-ken, JP
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 5340435 |
Bonded wafer and method of manufacturing it |
August 23, 1994 |
| A bonded wafer comprising a filmy bond wafer, a base wafer, and an intermediate silicon dioxide layer, wherein the periphery of the bond wafer is etched; this bonded wafer is made by: subjecting the bond wafer to an oxidation treatment to form an oxide film over it; joining the two w |
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