| Patent Number |
Title Of Patent |
Date Issued |
| 7622338 |
Method for manufacturing semiconductor device |
November 24, 2009 |
| The present invention provides a method for forming a semiconductor region having a desired shape, and also provides a method for manufacturing a semiconductor device with few variations. Moreover, the present invention provides a method for manufacturing a semiconductor device which can |
| 7605029 |
Method of manufacturing semiconductor device |
October 20, 2009 |
| According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H.sub.2, O, O.sub.2, and P are added, are formed in a semiconductor film having a crystal |
| 7572688 |
Method for manufacturing semiconductor device |
August 11, 2009 |
| An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming ga |
| 7564058 |
Display device, manufacturing method thereof, and television set |
July 21, 2009 |
| A manufacturing method of a display device having TFTs capable of high-speed operation with few variations of threshold voltage is provided, in which materials are used with high efficiency and a small number of photomasks is required. The display device of the invention comprises a |
| 7554117 |
Semiconductor device and manufacturing method thereof |
June 30, 2009 |
| An island-like interlayer insulating film is formed selectively in a region where a source interconnection and a gate interconnection intersect. For example, by use of ink jet method, a solution containing an insulating material is dropped on a region where the gate interconnection a |
| 7534705 |
Method of manufacturing a semiconductor device |
May 19, 2009 |
| An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting a |
| 7534670 |
Semiconductor device and manufacturing method of the same |
May 19, 2009 |
| Provided is a technique of effectively removing a metallic element that has catalytic action in terms of the crystallization of a semiconductor film and remains in a semiconductor film obtained using the metallic element. With the technique of the present invention, to remove a catal |
| 7511709 |
Display device |
March 31, 2009 |
| When semi-amorphous TFTs are used for forming a signal line driver circuit and a pixel, a large amplitude is required for driving the pixel, and a large power supply voltage is thus needed. On the other hand, when a shift register is made up of transistors having a single conductivity, a |
| 7477216 |
Display device and electronic apparatus |
January 13, 2009 |
| When a pixel and a signal line driver circuit are made up of semi-amorphous TFTs, an amplitude for driving the pixel has to be made larger, and a high power supply voltage is needed. The high power supply voltage increases power consumption in the case of partial drive. According to |
| 7465593 |
Electronics device, semiconductor device, and method for manufacturing the same |
December 16, 2008 |
| It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.In the invention, |
| 7446336 |
Electronics device, semiconductor device, and method for manufacturing the same |
November 4, 2008 |
| It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.In the invention, |
| 7384860 |
Method of manufacturing a semiconductor device |
June 10, 2008 |
| The present invention relates to a method of manufacturing a semiconductor device having an excellent gettering effect. In this method, when phosphorus is added to a poly-Si film, which has been crystallized by the addition of a metal, to subject the resultant poly-Si film to the heat |
| 7316947 |
Method of manufacturing a semiconductor device |
January 8, 2008 |
| An object is to reduce the number of high temperature (equal to or greater than 600.degree. C.) heat treatment process steps and achieve lower temperature (equal to or less than 600.degree. C.) processes, and to simplify the process steps and increase throughput in a method of manufa |
| 7314785 |
Display device and manufacturing method thereof |
January 1, 2008 |
| A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first electrode, an insulating layer covering an edge of the first electrode, a layer containing an orga |
| 7306982 |
Method of manufacturing a semiconductor device |
December 11, 2007 |
| It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600.degree. C.) and the employment of lower temperature processes (600.degree. C. or lower), and to achieve step simplification and throughput improvement. In the present in |
| 7229862 |
Method for manufacturing semiconductor device |
June 12, 2007 |
| An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming ga |
| 7205182 |
Method of manufacturing semiconductor device |
April 17, 2007 |
| The present invention is characterized in that gettering is performed such that impurity regions to which a noble gas element is added are formed in a semiconductor film and the metallic element included in the semiconductor film is segregated into the impurity regions by laser annea |
| 7033871 |
Method of manufacturing semiconductor device |
April 25, 2006 |
| According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H.sub.2, O, O.sub.2, and P are added, are formed in a semiconductor film having a crystal |
| 6858480 |
Method of manufacturing semiconductor device |
February 22, 2005 |
| According to the present invention, an impurity region, to which a rare gas element (also called a rare gas) and one kind or a plurality of kinds of elements selected from the group consisting of H, H.sub.2, O, O.sub.2, and P are added, are formed in a semiconductor film having a crystal |
| 6809012 |
Method of making a thin film transistor using laser annealing |
October 26, 2004 |
| The present invention is characterized in that gettering is performed such that impurity regions to which a noble gas element is added are formed in a semiconductor film and the metallic element included in the semiconductor film is segregated into the impurity regions by laser annea |
| 6808968 |
Method of manufacturing a semiconductor device |
October 26, 2004 |
| It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600.degree. C.) and the employment of lower temperature processes (600.degree. C. or lower), and to achieve step simplification and throughput improvement. In the present in |
