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Nakamura; Kouzo
Kanagawa, JP
No. of patents:

Patent Number Title Of Patent Date Issued
7875117 Nitrogen doped silicon wafer and manufacturing method thereof January 25, 2011
An epitaxial wafer and a high-temperature heat treatment wafer having an excellent gettering capability are obtained by performing epitaxial growth or a high-temperature heat treatment. A relational equation relating the density to the radius of an oxygen precipitate introduced in a
7759227 Silicon semiconductor substrate heat-treatment method and silicon semiconductor substrate treate July 20, 2010
A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing

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