Resources Contact Us Home
Nakamura; Kouzo
Kanagawa, JP
No. of patents:

Patent Number Title Of Patent Date Issued
7875117 Nitrogen doped silicon wafer and manufacturing method thereof January 25, 2011
An epitaxial wafer and a high-temperature heat treatment wafer having an excellent gettering capability are obtained by performing epitaxial growth or a high-temperature heat treatment. A relational equation relating the density to the radius of an oxygen precipitate introduced in a
7759227 Silicon semiconductor substrate heat-treatment method and silicon semiconductor substrate treate July 20, 2010
A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing

  Recently Added Patents
Semiconductor device
Badge or pin
Method and system for imaging a cross section of a specimen
Composition comprising a mixture of dextro- and levo-amphetamines complexed with ion-exchange resin particles to form drug resin particles
Method for cutting C--Mn steel with a fiber laser
Interactivity model for shared feedback on mobile devices
Apparatus for providing location information of hand-held device and method thereof
  Randomly Featured Patents
Pyrolytic boron nitride article
Liquid chilling system
Smartcard reader
Device and method for detecting small quantities of light, comprising an electronic image converter embodied in semiconductor technology
Device for measuring characteristic parameters of the speed of handwriting
Micro gamma camera with semiconducting detectors
Substituted N-heteroaryl tetrahydro-isoquinoline derivatives, preparation and therapeutic use thereof
Cam and lever ejector assembly
Transfer of calibrated time information in a mobile terminal