Resources Contact Us Home
Nakamura; Kouzo
Kanagawa, JP
No. of patents:

Patent Number Title Of Patent Date Issued
7875117 Nitrogen doped silicon wafer and manufacturing method thereof January 25, 2011
An epitaxial wafer and a high-temperature heat treatment wafer having an excellent gettering capability are obtained by performing epitaxial growth or a high-temperature heat treatment. A relational equation relating the density to the radius of an oxygen precipitate introduced in a
7759227 Silicon semiconductor substrate heat-treatment method and silicon semiconductor substrate treate July 20, 2010
A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing

  Recently Added Patents
Instance management of code in a database
Strongly bound carbon nanotube arrays directly grown on substrates and methods for production thereof
Method and apparatus for token-based context caching
Distortion compensation device, distortion compensation method, and radio transmitter
Light emitting device and light emitting device package
Negative active material for a rechargeable lithium battery, a method of preparing the same, and a rechargeable lithium battery comprising the same
  Randomly Featured Patents
Methods and apparatuses for selectively displaying information to an invited participant
Programming an array of resistance random access memory cells using unipolar pulses
Opening element for an insert nozzle of a slide gate valve apparatus and a method of opening said apparatus
Phonograph record rack
Output buffer
OLED display and sensor
Method of driving a fuser roll in an electrophotographic printer
Dimmer switch
Image heating apparatus for heating image formed on recording material