Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Nakamura; Kouzo
Address:
Kanagawa, JP
No. of patents:
2
Patents:












Patent Number Title Of Patent Date Issued
7875117 Nitrogen doped silicon wafer and manufacturing method thereof January 25, 2011
An epitaxial wafer and a high-temperature heat treatment wafer having an excellent gettering capability are obtained by performing epitaxial growth or a high-temperature heat treatment. A relational equation relating the density to the radius of an oxygen precipitate introduced in a
7759227 Silicon semiconductor substrate heat-treatment method and silicon semiconductor substrate treate July 20, 2010
A method is provided capable of universally controlling the proximity gettering structure, the need for which can vary from manufacturer to manufacturer, by arbitrarily controlling an M-shaped distribution in a depth direction of a wafer BMD density after RTA in a nitrogen-containing










 
 
  Recently Added Patents
Escalating data backup protection in response to a failure in a cluster of nodes
Remote management of networked systems using secure modular platform
Method for designing sunlight-reflection and heat-radiation multilayer film
Three-term predictive adder and/or subtracter
Single-lens reflex digital camera which displays an image for live view
Software self-checking systems and methods
Submersible remote smoke sensor
  Randomly Featured Patents
Rubber composition
Method of securing a sleeve within a tube
Alkylation process and catalyst therefor
Extended frequency range voltage-controlled oscillator
Compositions and methods for treating inflammatory conditions of the bowel
Image processing method, system, and computer readable medium
15-PGDH in colon cancer
Semiconductor device having contact opening smaller than test probe, and manufacturing process and inspecting method thereof
Portable ground fault circuit interrupter
Rifled weapon engraver and scanner