| Patent Number |
Title Of Patent |
Date Issued |
| 7579669 |
Semiconductor device including power MOS field-effect transistor and driver circuit driving ther |
August 25, 2009 |
| A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of |
| 7557545 |
Electric power unit operating in continuous and discontinuous conduction modes and control metho |
July 7, 2009 |
| An electronic power unit includes first and second MOS transistors and a digital control circuit. The first MOS transistor applies a voltage to the load. The second MOS transistor remains on while the first MOS transistor remains off and rectifies the current flowing in the load. The |
| 7554160 |
Semiconductor device |
June 30, 2009 |
| A semiconductor device has a source region, a channel region and a drain region formed in order along a surface of a substrate, a vertical type bipolar transistor formed from the source region below the substrate, a base contact region of the vertical type bipolar transistor, a buried |
| 7432579 |
Semiconductor device with horizontal MOSFET and Schottky barrier diode provided on single substr |
October 7, 2008 |
| A MOS field-effect transistor includes a semiconductor substrate of a first-conductivity type, a semiconductor layer of the first-conductivity type, a source region of a second-conductivity type, a first drain region of the second-conductivity type, a resurf layer of the second-condu |
| 7253473 |
Semiconductor device and method of manufacturing the same |
August 7, 2007 |
| A semiconductor device includes: a semiconductor substrate of the first-type; a semiconductor region of the first-type formed on the substrate; a gate electrode a part of which is present within a trench selectively formed in part of the semiconductor region, and an extended top-end |
| 7138698 |
Semiconductor device including power MOS field-effect transistor and driver circuit driving ther |
November 21, 2006 |
| A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of |
| 7115946 |
MOS transistor having an offset region |
October 3, 2006 |
| A semiconductor device includes a semiconductor region of a first conductivity type, a drain region of the first conductivity type, an offset region of the first conductivity type, a body region of the second conductivity type, a source region of the first conductivity type, a gate i |
| 7067876 |
Semiconductor device |
June 27, 2006 |
| A semiconductor device comprises a semiconductor substrate; a semiconductor layer having a higher resistance than that of said semiconductor substrate and provided on a top surface of said semiconductor substrate; a gate electrode provided on a gate insulating film on the top surface |
| 7061060 |
Offset-gate-type semiconductor device |
June 13, 2006 |
| A semiconductor device includes a first semiconductor region having a first conductivity type, a second semiconductor region formed on the first semiconductor region and having the first conductivity type, a third semiconductor region formed in a surface of the second semiconductor r |
| 7026214 |
Offset-gate-type semiconductor device |
April 11, 2006 |
| A semiconductor device includes a first semiconductor region having a first conductivity type, a second semiconductor region formed on the first semiconductor region and having the first conductivity type, a third semiconductor region formed in a surface of the second semiconductor r |
| 6878992 |
Vertical-type power MOSFET with a gate formed in a trench |
April 12, 2005 |
| A power MOSFET comprises, between source and drain electrodes, a low resistive semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type formed on the semiconductor substrate, a high resistive epitaxial layer of the first conductivity type for |
| 6864533 |
MOS field effect transistor with reduced on-resistance |
March 8, 2005 |
| A semiconductor substrate includes a first principal plane and a second principal plane opposite this first principal plane. A first semiconductor region is formed on the first principal plane of the semiconductor substrate. Second and third semiconductor regions are formed separately |
| 6614089 |
Field effect transistor |
September 2, 2003 |
| In an N-MOSFET having a Double RESURF structure, an n-drift layer and a p-base layer are formed to be adjacent to each other in the surface of a p-semiconductor active layer. An n.sup.+ -drain layer and a p-RESURF layer are formed in the surface of the drift layer. An n.sup.+ -source lay |
| 6614077 |
Semiconductor device improved in ESD reliability |
September 2, 2003 |
| In an LDMOS, a p.sup.+ -type anode layer is formed adjacent to an n.sup.+ -type drain layer. The anode layer makes no contribution to an operation of the LDMOS at a rated voltage and generates holes at the time of ESD. The holes flow into the base layer through the active layer. Electron |
| 6605844 |
Semiconductor device |
August 12, 2003 |
| A semiconductor device includes an active layer of a first conductive type. A base layer of a second conductive type is selectively formed on a surface region of said active layer. A source layer of the first conductive type is selectively formed on a surface region of the base layer |
| 6563193 |
Semiconductor device |
May 13, 2003 |
| A semiconductor device comprises a substrate the surface of which is formed of an insulation region, a high resistance active layer of a first conductivity type formed on the substrate, a first semiconductor region of the first conductivity type having an impurity concentration higher th |
| 6552389 |
Offset-gate-type semiconductor device |
April 22, 2003 |
| A semiconductor device includes a first semiconductor region having a first conductivity type, a second semiconductor region formed on the first semiconductor region and having the first conductivity type, a third semiconductor region formed in a surface of the second semiconductor r |
| 6380566 |
Semiconductor device having FET structure with high breakdown voltage |
April 30, 2002 |
| An N-MOSFET is formed on an SOI substrate consisting of a semiconductor substrate, an insulating layer and an n.sup.- -active layer. A p-well layer, an n-RESURF layer, and an n-diffusion layer are formed in the surface of the n.sup.- -active layer between a source electrode and a dra |
| 6353252 |
High breakdown voltage semiconductor device having trenched film connected to electrodes |
March 5, 2002 |
| A plurality of trenches are formed in a drift region between a p-type body region and an-type buffer region. A silicon oxide film is formed on the side and bottom of each of the trenches, and an SIPOS film is buried into each of the trenches. The trenches are formed by RIE, and the SIPOS |
