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Inventor: Nakamura; Fumihiko
Address: Kanagawa, JP
No. of patents: 5
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| RE38613 |
Method for growing a nitride compound semiconductor |
October 5, 2004 |
| A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, |
| 6686611 |
Nitride semiconductor and a method thereof, a nitride semiconductor device and a method thereof |
February 3, 2004 |
| In a nitride semiconductor of BpAlqGarInsN (0.ltoreq.p.ltoreq.1, 0.ltoreq.q.ltoreq.1, 0.ltoreq.r.ltoreq.1, 0.ltoreq.s.ltoreq.1, p+q+r+s=1), in particular a p-type nitride compound semiconductor, a point defect concentration of the p-type semiconductors is set to 1.times.10.sup.19 cm. |
| 6429032 |
Nitride semiconductor and a method thereof, a nitride semiconductor device and a method thereof |
August 6, 2002 |
| In a nitride semiconductor of BpAlqGarInsN (0.ltoreq.p.ltoreq.1, 0.ltoreq.q.ltoreq.1, 0.ltoreq.r.ltoreq.1, 0.ltoreq.s.ltoreq.1, p+q+r+s=1), in particular a p-type nitride compound semiconductor, a point defect concentration of the p-type semiconductors is set to 1.times.10.sup.19 cm. |
| 6413312 |
Method for growing a nitride compound semiconductor |
July 2, 2002 |
| A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, |
| 6043140 |
Method for growing a nitride compound semiconductor |
March 28, 2000 |
| A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, |
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