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Nakajima; Yoshibumi
Ashikaga, JP
No. of patents:

Patent Number Title Of Patent Date Issued
7005688 Semiconductor device with impurity layer to prevent depletion layer expansion February 28, 2006
A semiconductor switching device includes a plurality of metal layers. At least one of the metal layers forming a Schottky junction with a semi-insulating substrate or an insulating layer on a substrate. The device also includes an impurity diffusion region, and a high-concentration
6914280 Switching circuit device July 5, 2005
Since a 5 GHz-band broadband has a frequency twice that of 2.4 GHz, the parasitic capacitance greatly influences deterioration in isolation of a switching device used in this frequency region. Therefore, to improve isolation, a shunt FET is added to the device. The switching device also
6787871 Integrated schottky barrier diode and manufacturing method thereof September 7, 2004
An integrated Schottky barrier diode chip includes a compound semiconductor substrate, a plurality of Schottky barrier diodes formed on the substrate and an insulating region formed on the substrate by an on implantation. The insulating region electrically separates a portion of a diode
6627967 Schottky barrier diode September 30, 2003
A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic electrode is disposed directly on an impurity-implanted region formed on the substrate. An insu

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