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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Nakada; Masafumi
Address:
Tokyo, JP
No. of patents:
46
Patents:












Patent Number Title Of Patent Date Issued
8254745 Optical device, optical integrated device, and method of manufacturing the same August 28, 2012
At least part of an optical device comprises an optical waveguide of a magneto-optical material. The magneto-optical material comprises a polycrystalline material having no lattice matching with an underlayer material. The optical waveguide exhibits no magnetic anisotropy due to an i
8233753 Electric field sensor, magnetic field sensor, electromagnetic field sensor and electromagnetic f July 31, 2012
An electric field sensor or a magnetic field sensor includes an optical fiber and an electro-optic layer or a magneto-optic layer. The electro-optic layer or a magneto-optic layer is provided on an end surface of an end portion of the optical fiber. The end surface of the optical fib
8153955 Electric field sensor and method for fabricating the same April 10, 2012
An electric field sensor is obtained by directly forming an electrooptical film of Fabry-Perot resonator structure on a polished surface at a tip of an optical fiber by an aerosol deposition method.
8116600 Optical phase modulation element and optical modulator using the same February 14, 2012
Provided is a small-size optical phase modulation element and an optical modulator using it. The optical phase modulation element includes a Plasmon waveguide having a clad made of a metal material having a complex dielectric constant having a negative real part in the used wavelength
7920769 Optical element, integrated optic device and optical information transmission system April 5, 2011
In a compact formed by subjecting an ultrafine particle brittle material supplied on a substrate to mechanical impact force as a load, whereby the ultrafine particle brittle material is crushed and joined to each other, manganese is added into the ultrafine particle brittle material to f
7372673 Magnetoresistive effect transducer having longitudinal bias layer and control layer directly con May 13, 2008
In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to
7369375 Magneto-resistance effect element and magneto-resistance effect head May 6, 2008
A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A first magnetic layer is provided on the lower conductive layer. On the first magnetic layer, layered in t
7298596 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer November 20, 2007
A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order a
7277261 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer October 2, 2007
A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order a
7272270 Optical modulator and method of manufacturing same September 18, 2007
Laser light emitted from a vertically confined surface emitting laser (VCSEL) is incident on a side surface near an end region of an optical waveguide. The end region of the optical waveguide is processed by polishing to taper at an angle of 45 degrees, and an optical modulator is fo
7265949 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer September 4, 2007
A magneto-resistance effect element is adapted that a non-magnetic layer (9, 18), a free layer (3b, 19), another non-magnetic layer (4, 25), a fixed layer (5, 26), and a fixing layer (6b, 27) are formed vertically symmetric with respect to a first magnetic layer (8b), to which a vert
7162109 Optical modulator and method of manufacturing same January 9, 2007
Laser light emitted from a vertically confined surface emitting laser (VCSEL) is incident on a side surface near an end region of an optical waveguide. The end region of the optical waveguide is processed by polishing to taper at an angle of 45 degrees, and an optical modulator is fo
7161774 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer January 9, 2007
A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order a
7158355 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer January 2, 2007
A magneto-resistance effect element is provided and includes a lower conductive layer, a pattern provided thereon and made up of a fixed layer having a pinned orientation of magnetization, a first non-magnetic layer provided on the fixed layer, a free layer provided on the non-magnetic
7120326 Optical element, optical integrated device, optical information transmission system, and manufac October 10, 2006
An optical element is formed from a molded body which is formed using an impact consolidation phenomenon in which mechanical impact is applied to ultra fine fragile particles which are supplied onto a substrate so that the ultra fine fragile particles are pulverized and bonded to each ot
6999287 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer February 14, 2006
A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order a
6950290 Magnetoresistive effect transducer having longitudinal bias layer directly connected to free lay September 27, 2005
In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the
6934132 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer August 23, 2005
A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order a
6903908 Magnetoresistive effect sensor with barrier layer smoothed by composition of lower shield layer June 7, 2005
A magnetoresistive effect sensor uses a shielded-type magnetoresistive effect element using a magnetoresistive effect film formed by a basic configuration of a combination of a free layer, a barrier layer formed on the free layer, and a fixed layer formed on the barrier layer, wherein a
6798626 Magnetoresistive effect element having a ferromagnetic tunnel junction film with an oxide or nit September 28, 2004
A magnetoresistive effect element which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the element and a magnetic recording apparatus utilizing the element. This magnetoresistive ef
6781800 Magnetoresistance effect film and device August 24, 2004
A magnetic layer which is exchange-coupled to an antiferromagnetic layer and given an exchange bias therefrom is laminated via a non-magnetic layer on another magnetic layer to form an MR film. The antiferromagnetic layer (PtMn, PdMn or NiMn) is laminated on a ground layer (Zr, Hf, Zr--H
6775110 Magnetoresistance effect device with a Ta, Hf, or Zr sublayer contacting an NiFe layer in a magn August 10, 2004
A magnetoresistance effect device has the basic structure of substrate/sublayer/NiFe layer/CoFe layer/non-magnetic layer/fixed magnetic layer/antiferromagnetic layer. The sublayer may be Ta at a film thickness of not less than 0.2 nm but less than 3.0 nm, or Hf at a film thickness of
6747853 Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer June 8, 2004
A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order a
6718621 Magnetoresistive head production method April 13, 2004
In a production process of an MR head using the tunnel junction film basically consisting of a free layer, a barrier layer, and a pinned layer, the resistance between the free layer and the pined layer reduced beforehand and increased afterward up to a resistance value necessary when
6639766 Magneto-resistance effect type composite head and production method thereof October 28, 2003
A magneto-resistance effect ("MR") type composite head includes a reproduction head with an MR element arranged between a first and a second magnetic shield; and a recording head arranged adjacent to the reproduction head so as to use the second magnetic shield as a first magnetic po
6624987 Magnetic head with a tunnel junction including metallic material sandwiched between one of an ox September 23, 2003
A magnetoresistive effect head which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the head and a magnetic recording apparatus utilizing the head. This magnetoresistive effect head
6570744 Magnetoresistance effect film and device May 27, 2003
A magnetic layer which is exchange-coupled to an antiferromagnetic layer and given an exchange bias therefrom is laminated via a non-magnetic layer on another magnetic layer to form an MR film. The antiferromagnetic layer (PtMn, PdMn or NiMn) is laminated on a ground layer(Zr, Hf, Zr--Hf
6542342 Magnetoresistive effect transducer having longitudinal bias layer directly connected to free lay April 1, 2003
In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the
6538861 MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WITH A SMALLER RESISTANCE AT A T March 25, 2003
A magnetoresistive head whose operation depends on a magnetoresistive effect is configured using a ferromagnetic tunnel junction (MTJ) film, which is arranged between a lower electrode and an upper electrode. The ferromagnetic tunnel junction film is basically configured using a set of
6493195 Magnetoresistance element, with lower electrode anti-erosion/flaking layer December 10, 2002
A magnetoresistance element includes a lower electrode layer, a magnetoresistance effect layer, an upper electrode layer and a lower electrode anti-erosion/flaking layer. The lower electrode anti-erosion/flaking layer, which is formed before a photoresist layer remaining on the patte
6490139 Magneto-resistive element and magnetic head for data writing/reading December 3, 2002
A magneto-resistive element comprises a first electrode, a magneto-resistive layer formed on the first electrode in which resistance is changed in accordance with magnetic field, and a second electrode layer formed on the magneto-resistive layer. The magneto-resistive layer has a fir
6452762 Magneto-resistive element and production method thereof, magneto-resistive head, and magnetic re September 17, 2002
The present invention provides a magneto-resistive (MR) element comprising: a first magnetic layer 1 provided on a substrate; a non-magnetic layer 3 arranged to be in contact with the first magnetic layer; and a second magnetic layer 2 arranged to be in contact with the non-magnetic laye
6341053 Magnetic tunnel junction elements and their fabrication method January 22, 2002
The present invention provides a magnetic tunnel junction device for an external magnetic field sensor. The device comprises a stack of multi-layers, which include a first antiferromagnetic pinning layer, a ferromagnetic free layer, a tunneling barrier layer, a ferromagnetic pinned l
6333842 Magneto-resistance effect type composite head and production method thereof December 25, 2001
The present invention provides a magneto-resistance effect (hereinafter, referred to as MR) type composite head. The head includes a reproduction head including an MR element arranged between a first and a second magnetic shield; and a recording head arranged next to the reproduction
6301088 Magnetoresistance effect device and method of forming the same as well as magnetoresistance effe October 9, 2001
The present invention provides a multilayer structure comprising: one of a first antiferromagnetic layer and a bias ferromagnetic layer; an interface control layer in contact with the one of the first antiferromagnetic layer and the bias ferromagnetic layer; a free magnetic layer in cont
6215631 Magnetoresistive effect film and manufacturing method therefor April 10, 2001
A magnetoresistive effect film has a lamination of an antiferromagnetic thin film, a magnetic thin film that is in contact with the antiferromagnetic thin film, a non-magnetic thin film that is in contact with the magnetic film, and another magnetic thin film that is in contact with
6174736 Method of fabricating ferromagnetic tunnel junction device January 16, 2001
There is provided a method of fabricating a ferromagnetic tunnel junction device, including the steps of (a) forming a first ferromagnetic layer on a substrate, (b) forming a tunnel barrier layer on the first ferromagnetic layer, (c) forming a second ferromagnetic layer on the tunnel bar
6147843 Magnetoresistive effect element having magnetoresistive layer and underlying metal layer November 14, 2000
In a magnetoresistive element, an underlying metal layer is formed on a substrate, and a magnetoresistive layer is formed on the underlying metal layer. The underlying metal layer has a thickness of about 0.1 to 3.0 nm.
6083632 Magnetoresistive effect film and method of manufacture thereof July 4, 2000
A magnetoresistive effect film is formed by laminating a plurality of magnetic thin films onto a substrate with an intervening non-magnetic thin film, an antiferromagnetic thin film being provided so as to neighbor to one of the ferromagnetic thin film via this intervening non-magnetic t
6051309 Magnetoresistance effect film and method for making the same April 18, 2000
Disclosed are magnetoresistance effect films which have a magnetic thin film and an anti-ferromagnetically coupled magnetic multilayer thin film inserted into the interface between the non-magnetic thin film and the magnetic thin film, and a method for forming magnetoresistance effect
6022633 Magnetoresistive effect element and magnetoresistive effect sensor February 8, 2000
A magnetoresistive effect element having a lamination structure of a free magnetic layer, a non-magnetic layer in contact with the free magnetic layer, a pinned magnetic layer in contact with the non-magnetic layer, and an anti-ferromagnetic layer in contact with the pinned magnetic laye
5989690 Magnetoresistance effect film, a method of manufacturing the same, and magnetoresistance effect November 23, 1999
Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc.sub.2 <Hr is satisfied between a bias magnetic field Hr of the antiferr
5932343 Magnetic resistance effect element and method for manufacture thereof August 3, 1999
A magnetoresistive effect element has an NiO layer, an intermediate layer, a first ferromagnetic layer, a first MR enhancement layer, a non-magnetic layer, a second MR enhancement layer, a second ferromagnetic layer, and a protective layer, laminated in sequence onto an underlayer, the
5917799 Method of reading data of magneto-optical recording medium which includes a guide groove portion June 29, 1999
In a magneto-optical recording medium which includes a guide groove portion having a land area, a groove area, and a boundary area between the land area and the groove area, both of the land area and the groove area may have a V-shaped cross-section. At least one of the land area and the
5889640 Magnetoresistive element and sensor having optimal cross point March 30, 1999
A magnetoresistive element generally includes consecutively an antiferromagnetic layer, a first ferromagnetic layer, a non-mangetic layer, and a second ferromagnetic layer. Instead of the non-magnetic layer, the magnetoresistive element may include a combination of a Co layer, a non-
5766743 Magnetoresistance effect film, a method of manufacturing the same, and magnetoresistance effect June 16, 1998
Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc.sub.2 <Hr is satisfied between a bias magnetic field Hr of the antiferr










 
 
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