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Inventor:
Nagaoka; Tatsuji
Address:
Nagano, JP
No. of patents:
12
Patents:












Patent Number Title Of Patent Date Issued
7692239 MIS-type semiconductor device April 6, 2010
A MIS-type semiconductor device has reduced ON-resistance by securing an overlapping area between the gate electrode and the drift region, and has low switching losses by reducing the feedback capacitance. The MIS-type semiconductor device includes a p-type base region, an n-type drift
7368799 Semiconductor apparatus and method of manufacturing the same May 6, 2008
The semiconductor apparatus is disclosed that includes a partial SOI substrate including an oxide film; a lateral first MOSFET section having a planar gate structure and formed in the portion of the partial SOI substrate where there is an oxide film; a vertical second MOSFET section
7067877 MIS-type semiconductor device June 27, 2006
A MIS-type semiconductor device has reduced ON-resistance by securing an overlapping area between the gate electrode and the drift region, and has low switching losses by reducing the feedback capacitance. The MIS-type semiconductor device includes a p-type base region, an n-type drift
7042046 Super-junction semiconductor device and method of manufacturing the same May 9, 2006
Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with a first alternati
7002205 Super-junction semiconductor device and method of manufacturing the same February 21, 2006
Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with a first alternati
6903418 Semiconductor device June 7, 2005
A semiconductor device facilitates obtaining a higher breakdown voltage in the portion of the semiconductor chip around the drain drift region and improving the avalanche withstanding capability thereof. A vertical MOSFET according to the invention includes a drain layer; a drain drift r
6825565 Semiconductor device November 30, 2004
A semiconductor device includes a drift region, which includes a first alternating conductivity type layer, and a peripheral region, which includes a second alternating conductivity type layer and a third alternating conductivity type layer in the surface portion of the peripheral re
6825537 Vertical field effect transistor November 30, 2004
In a trench super junction semiconductor element having a parallel p-n junction layer 14 with n-drift regions 12 and p-partition regions 13, both extending in a depth direction, being alternately joined, a part 20 in a shape of a three-dimensional curved surface in the end portion of eac
6768167 MIS semiconductor device and the manufacturing method thereof July 27, 2004
A MIS semiconductor device has a greatly improved relation between the on-resistance and the switching time by forming trench completely through a p base region and positioning the trench adjacent to a gate electrode, and then implanting n-type impurity ions using the gate electrode as a
6724042 Super-junction semiconductor device April 20, 2004
Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with a first alternati
6696728 Super-junction semiconductor device February 24, 2004
To provide a super-junction MOSFET reducing the tradeoff relation between the on-resistance and the breakdown voltage greatly and having a peripheral structure, which facilitates reducing the leakage current in the OFF-state thereof and stabilizing the breakdown voltage thereof. The
6674126 Semiconductor device January 6, 2004
A semiconductor device facilitates obtaining a higher breakdown voltage in the portion of the semiconductor chip around the drain drift region and improving the avalanche withstanding capability thereof. A vertical MOSFET according to the invention includes a drain layer; a drain drift r










 
 
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