| Patent Number |
Title Of Patent |
Date Issued |
| 7195943 |
Cold cathode field emission device and process for the production thereof, and cold cathode fiel |
March 27, 2007 |
| A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. The support member is |
| 7169628 |
Cold cathode field emission device and process for the production thereof, and cold cathode fiel |
January 30, 2007 |
| A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. The support member is |
| 7166482 |
Cold cathode field emission device and process for the production thereof, and cold cathode fiel |
January 23, 2007 |
| A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. The support member is |
| 7118927 |
Cold cathode field emission device and process for the production thereof, and cold cathode fiel |
October 10, 2006 |
| A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. The support member is |
| 6991949 |
Manufacturing method of an electron emitting apparatus |
January 31, 2006 |
| A cold cathode field emission device comprising a cathode electrode 11 formed on a supporting member 10, a gate electrode 13 which is formed above the cathode electrode 11 and has an opening portion 14, and an electron emitting portion 15 formed on a surface of a portion of the catho |
| 6900066 |
Cold cathode field emission device and process for the production thereof, and cold cathode fiel |
May 31, 2005 |
| A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. The support member is |
| 6580155 |
Semiconductor device |
June 17, 2003 |
| The semiconductor device comprising a lower conductive layer (11) and an upper conductive layer (12) which are formed via an interlayer insulator (20) on a substrate (1), wherein the interlayer insulator (20) has a stack structure of an organic resin layer (21) formed on the lower conduc |
| 6169023 |
Method for making semiconductor device |
January 2, 2001 |
| An SiOF layer is formed by using as raw material an organic Si compound having Si--F bonds. Since an organic Si compound is used as raw material, an intermediate product being formed during the formation of an SiOF layer is liable to polymerize and has fluidity. Moreover, since the organ |
| 6066573 |
Method of producing dielectric film |
May 23, 2000 |
| A surface of a substrate is coated with a coating agent to form a coating film. The coating agent contains a material capable of generating moisture (for example, hydrogen-silsesquioxane or hydroxysilazane) and an additive capable of generating a gas by reaction with the moisture thus ge |
| 5779521 |
Method and apparatus for chemical/mechanical polishing |
July 14, 1998 |
| A polishing method and apparatus applied for planarizing a substrate presenting surface step differences in a production process for a substrate of a semiconductor device. The substrate is ground by being brought into sliding contact with a polishing cloth applied taut on a rotary ta |
| 5767016 |
Method of forming a wiring layer on a semiconductor by polishing with treated slurry |
June 16, 1998 |
| In forming a wiring layer on a semiconductor stepped substrate (wafer) 15, the wiring layer is polished by using a slurry 12 which contains polishing particles treated in advance with a surface treatment agent containing at least an amino group. During polishing, a uniformity of polishin |
| 5728308 |
Method of polishing a semiconductor substrate during production of a semiconductor device |
March 17, 1998 |
| A chemical mechanical polishing slurry comprised of particulates of metal oxide material including at least two metals with oxides having significantly different points of zero charges dispersed in pure water; a method of production of a chemical mechanical polishing slurry including a |
| 5709588 |
Polishing slurry and polishing process using the same |
January 20, 1998 |
| A polishing slurry used for a process of polishing a workpiece by bringing the workpiece in sliding-contact with a polishing plate supplied with the slurry, and a polishing process using the slurry. The slurry includes polishing particles treated with a surface finishing agent having at |
| 5700736 |
Method for making semiconductor device |
December 23, 1997 |
| An SiOF layer is formed by using as raw material an organic Si compound having Si-F bonds. Since an organic Si compound is used as raw material, an intermediate product being formed during the formation of an SiOF layer is liable to polymerize and has fluidity. Moreover, since the organi |
| 5578530 |
Manufacturing method of semiconductor device which includes forming a silicon nitride layer usin |
November 26, 1996 |
| In a manufacturing method of semiconductor device having a fluorine-containing SiN layer, an SiN layer excellent in the step coverage can be formed using as raw material an Si compound containing at least both nitrogen and fluorine, by virtue of an intermediate product which, during |
| 5470800 |
Method for forming an interlayer film |
November 28, 1995 |
| A process for forming an interlayer membrane by chemical vapor deposition comprises the steps of supplying gaseous materials to a reaction chamber in which a wafer to be deposited is installed, supplying a catalyst gas to the reaction chamber separately from but concurrently with the gas |
| 5320708 |
Dry etching method |
June 14, 1994 |
| A dry etching method by which the surface of a variety of materials constituting a semiconductor device may be planarized or smoothed under clean state. Small-sized recesses existing on the surface of a layer of the material to be etched are filled with deposited free sulfur yielded |
| 5314710 |
Insulation layer forming method |
May 24, 1994 |
| An insulation layer forming method for processing a substrate having a first surface area covered with a photo resist mask pattern and a second surface area uncovered with the photo resist mask pattern to form an SiO2 insulation layer on the second surface area of the substrate. The meth |
| 5264074 |
Flattening method for interlayer insulating film |
November 23, 1993 |
| Disclosed herein is a flattening method for an interlayer insulating film in a semiconductor device. A substance for forming a solid flattening film is prepared in a liquid-phase state, and a film (e.g., water film) of the substance in the liquid-phase state having a substantially flat u |
| 5260232 |
Refractory metal plug forming method |
November 9, 1993 |
| A method for forming a plug in a connecting hole formed in an interlayer insulating film by filling a layer of a refractory metal in the connecting hole, in which the surface of a tungsten layer produced by a selective CVD method or a blanket CVD method (Blk-CVD method) with rough surfac |
| 5248629 |
Process for fabricating capacitor for semiconductor storage device |
September 28, 1993 |
| A capacitor (12) of a semiconductor storage device, for example, dynamic RAM (11), comprises a storage node (31), a storage capacitance portion (32) formed of tantalum oxynitride film, and a plate (33). The tantalum oxynitride film is produced by a chemical vapor deposition (CVD) process |
| 5028497 |
Magnetic recording medium utilizing a fungicide |
July 2, 1991 |
| A magnetic recording medium having a magnetic layer on one surface of a non-magnetic base and having as required a backcoat layer on the other surface, having at least one of p-tolyldiiodemethylsulfone, 2,3,3-triiodoallyl alcohol and 2-methoxycarbonylaminobenzimidazole and 2-methoxyc |
