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Inventor:
Murata; Michio
Address:
Yokohama, JP
No. of patents:
10
Patents:












Patent Number Title Of Patent Date Issued
8300992 Optical modulator having Mach-Zender arrangement and method to generate modulated optical signal October 30, 2012
A semiconductor optical modulator with the Mach-Zender type is disclosed. The optical modulator of the invention cab driven by a single phase signal and reduce the chirping of the modulated light. Two waveguides of the Mach-Zender modulator each including an active layer showing the
8243768 Semiconductor diffraction grating device and semiconductor laser August 14, 2012
A semiconductor diffraction grating device includes a semiconductor substrate having a principal surface, a semiconductor core layer and a semiconductor cladding layer provided on the principal surface, and a chirped grating structure provided between the semiconductor core layer and
8063408 Integrated semiconductor optical device and optical apparatus using the same November 22, 2011
In an integrated semiconductor optical device, a first cladding layer is made of a first conductivity type semiconductor. A first active layer for forming a first semiconductor optical device is provided on the first cladding layer in a first area of a principal surface of a substrate. A
8003995 Semiconductor optical device with suppressed double injection phenomenon August 23, 2011
A semiconductor optical device where the leak current due to the double injection of carriers may be suppressed and a simplified process to form the device are disclosed. The device 10 provides, on the n-type InP substrate, a mesa and a burying region formed so as to bury the mesa. The
7803645 Semiconductor light-emitting device and a method for manufacturing the same September 28, 2010
The present invention is to provide a light-emitting device, a laser diode, formed without using the mechanical cleavage, and a process for manufacturing the device. The process comprises, after stacking semiconductor layers of the first cladding layer, the active layer, and the seco
7627009 Light-emitting device on n-type InP substrate heavily doped with sulfur December 1, 2009
The present invention provides a structure of a light-emitting device which prevents the inter diffusion of impurities from the high-doped n-type InP substrate to a p-type current blocking layer. The substrate of the invention is highly doped with sulfur (S) to obtain high quality su
6995454 Semiconductor optical integrated device having a light emitting portion, a modulation section an February 7, 2006
A semiconductor optical integrated device 1 comprises a light-emitting element portion 110, modulation element portion 120, and separation portion 130 on a substrate 2. Light-emitting element portion 110 comprises a semiconductor laser element portion, and modulation element portion
6067310 Semiconductor laser and method of making the same May 23, 2000
In the present method, at the time when a semiconductor laser is being made, nitrogen or phosphorus element is introduced into an active layer comprising a GaAs based compound from an end face thereof, thereby changing the region of the active layer in the vicinity of the end face in
5995692 Light emitting device module November 30, 1999
The present invention relates to a light emitting device module which can easily be made and can yield a stable output characteristic, and a method of making the same. The light emitting device module in according to the present invention comprises a semiconductor device in which an acti
5734671 Semiconductor laser diode March 31, 1998
A semiconductor laser diode which can be applied to optical fiber amplifiers to attain a high reliability and can generate light having a wavelength of about 1 .mu.m is provided. This semiconductor laser diode is formed on a GaAs substrate and has an active layer comprising a GaInAsP










 
 
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