| Patent Number |
Title Of Patent |
Date Issued |
| 8300992 |
Optical modulator having Mach-Zender arrangement and method to generate modulated optical signal |
October 30, 2012 |
| A semiconductor optical modulator with the Mach-Zender type is disclosed. The optical modulator of the invention cab driven by a single phase signal and reduce the chirping of the modulated light. Two waveguides of the Mach-Zender modulator each including an active layer showing the |
| 8243768 |
Semiconductor diffraction grating device and semiconductor laser |
August 14, 2012 |
| A semiconductor diffraction grating device includes a semiconductor substrate having a principal surface, a semiconductor core layer and a semiconductor cladding layer provided on the principal surface, and a chirped grating structure provided between the semiconductor core layer and |
| 8063408 |
Integrated semiconductor optical device and optical apparatus using the same |
November 22, 2011 |
| In an integrated semiconductor optical device, a first cladding layer is made of a first conductivity type semiconductor. A first active layer for forming a first semiconductor optical device is provided on the first cladding layer in a first area of a principal surface of a substrate. A |
| 8003995 |
Semiconductor optical device with suppressed double injection phenomenon |
August 23, 2011 |
| A semiconductor optical device where the leak current due to the double injection of carriers may be suppressed and a simplified process to form the device are disclosed. The device 10 provides, on the n-type InP substrate, a mesa and a burying region formed so as to bury the mesa. The |
| 7803645 |
Semiconductor light-emitting device and a method for manufacturing the same |
September 28, 2010 |
| The present invention is to provide a light-emitting device, a laser diode, formed without using the mechanical cleavage, and a process for manufacturing the device. The process comprises, after stacking semiconductor layers of the first cladding layer, the active layer, and the seco |
| 7627009 |
Light-emitting device on n-type InP substrate heavily doped with sulfur |
December 1, 2009 |
| The present invention provides a structure of a light-emitting device which prevents the inter diffusion of impurities from the high-doped n-type InP substrate to a p-type current blocking layer. The substrate of the invention is highly doped with sulfur (S) to obtain high quality su |
| 6995454 |
Semiconductor optical integrated device having a light emitting portion, a modulation section an |
February 7, 2006 |
| A semiconductor optical integrated device 1 comprises a light-emitting element portion 110, modulation element portion 120, and separation portion 130 on a substrate 2. Light-emitting element portion 110 comprises a semiconductor laser element portion, and modulation element portion |
| 6067310 |
Semiconductor laser and method of making the same |
May 23, 2000 |
| In the present method, at the time when a semiconductor laser is being made, nitrogen or phosphorus element is introduced into an active layer comprising a GaAs based compound from an end face thereof, thereby changing the region of the active layer in the vicinity of the end face in |
| 5995692 |
Light emitting device module |
November 30, 1999 |
| The present invention relates to a light emitting device module which can easily be made and can yield a stable output characteristic, and a method of making the same. The light emitting device module in according to the present invention comprises a semiconductor device in which an acti |
| 5734671 |
Semiconductor laser diode |
March 31, 1998 |
| A semiconductor laser diode which can be applied to optical fiber amplifiers to attain a high reliability and can generate light having a wavelength of about 1 .mu.m is provided. This semiconductor laser diode is formed on a GaAs substrate and has an active layer comprising a GaInAsP |
