| Patent Number |
Title Of Patent |
Date Issued |
| 7554116 |
Display device |
June 30, 2009 |
| A display device according to the present invention includes: a planarization layer for insulating between a gate electrode etc. and a data wiring, a drain electrode, or the like of the transistor; and a barrier layer that is formed on an upper surface or lower surface of the planari |
| 7537972 |
Semiconductor device and method of manufacturing the same |
May 26, 2009 |
| The present invention provides the structure and manufacturing method of a semiconductor device that consumes small power even when a screen is made to be larger. A signal wiring line or a part of a gate wiring line is formed from a low resistant material (typically aluminum) and p-chann |
| 7511303 |
Semiconductor device and method of manufacturing same |
March 31, 2009 |
| A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low |
| 7501671 |
Semiconductor device and method of manufacturing the same |
March 10, 2009 |
| The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semiconductor film to the |
| 7465677 |
Semiconductor device and method for manufacturing the same |
December 16, 2008 |
| A manufacturing method of a semiconductor device of the present invention includes the steps of forming a first insulating film over a substrate, forming a semiconductor film over the first insulating film, oxidizing or nitriding the semiconductor film by conducting a plasma treatment to |
| 7442963 |
Light emitting apparatus and method for manufacturing the same |
October 28, 2008 |
| The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic in |
| 7432529 |
Light emitting apparatus and method for manufacturing the same |
October 7, 2008 |
| The purpose of the invention is to improve reliability of a light emitting apparatus comprising a TFT and organic light emitting elements. |
| 7417249 |
Semiconductor device having a wiring including an aluminum carbon alloy and titanium or molybden |
August 26, 2008 |
| According to the present invention, wirings, electrodes or the like formed from two films (an ITO film and an aluminum film) which are incompatible with each other are connected, and low power consumption is realized even if a display screen size is increased in an active matrix display |
| 7403238 |
Electrooptical device, method of manufacturing the same, and electronic equipment |
July 22, 2008 |
| An AMLCD having high fineness and high contrast is realized. First, an interlayer film is provided on an element electrode, and an opening portion is formed in the interlayer film. Next, after a first metal layer is formed, an embedded insulating layer is formed. The embedded insulat |
| 7391055 |
Capacitor, semiconductor device and manufacturing method thereof |
June 24, 2008 |
| A highly reliable capacitor, a semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. A capacitor formed of a first conductive film 102, a dielectric 103 made of an insulating material, and a second conductive film 104 is |
| 7355205 |
Light emitting apparatus and method for manufacturing the same |
April 8, 2008 |
| The purpose of the invention is to improve reliability of a light emitting apparatus comprising a TFT and organic light emitting elements.The light emitting apparatus according to the invention having a thin film transistor and a light emitting element, comprises; a first inorganic i |
| 7330234 |
Semiconductor device |
February 12, 2008 |
| A highly reliable capacitor, a semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. A capacitor formed of a first conductive film 102, a dielectric 103 made of an insulating material, and a second conductive film 104 is |
| 7314774 |
Semiconductor device and method of manufacturing the same |
January 1, 2008 |
| In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal li |
| 7227603 |
Liquid-crystal electro-optical apparatus and method of manufacturing the same |
June 5, 2007 |
| A liquid crystal device comprising: a pair of substrates having an electrode arrangement thereon; an orientation control means provided on at least one of said substrates; and a ferroelectric or antiferroelectric liquid crystal layer interposed between said substrates, said liquid |
| 7202497 |
Semiconductor device |
April 10, 2007 |
| A semiconductor device and a process for producing the same, the semiconductor device comprising two conductive layers provided as separate layers, and an insulating layer sandwiched by the two conductive layers, in which the two conductive layers are electrically connected to each o |
| 7198992 |
Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and |
April 3, 2007 |
| The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semiconductor film to the |
| 7192865 |
Semiconductor device and process for producing the same |
March 20, 2007 |
| A semiconductor device and a process for producing the same, the semiconductor device comprising two conductive layers provided as separate layers, and an insulating layer sandwiched by the two conductive layers, in which the two conductive layers are electrically connected to each o |
| 7183144 |
Semiconductor device and method of manufacturing the same |
February 27, 2007 |
| According to the present invention, a pixel TFT (an n-channel TFT) having a considerably low OFF current value and a high ratio of an ON current value to an OFF current value can be realized. In a pixel portion, an electrode having a taper portion with a width of 1 .mu.m or more is f |
| 7173283 |
Semiconductor device and method of manufacturing the same |
February 6, 2007 |
| A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low |
| 7161176 |
Electroluminescence display device having a semiconductor substrate |
January 9, 2007 |
| There is provided an active matrix type display device in which the display device is formed of a driver circuit with an insulated gate FET capable of operating at high speed, and even if an area of a pixel electrode per unit pixel is made small, sufficient storage capacitance can be |
| 7148510 |
Electronic apparatus having a protective circuit |
December 12, 2006 |
| A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or |
| 7129523 |
Light-emitting device |
October 31, 2006 |
| The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of |
| 7126661 |
In-plane switching display device having common electrode overlapping channel forming region, an |
October 24, 2006 |
| A method of forming a storage capacitor in an IPS liquid crystal display device is proposed, and a technique of forming a pixel region having a high aperture ratio is provided. An anodic oxidation process at an applied voltage/voltage supply time ratio of 11 V/min is performed for in |
| 7067845 |
Semiconductor device and method of manufacturing the same |
June 27, 2006 |
| In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal li |
| 7042024 |
Light emitting apparatus and method for manufacturing the same |
May 9, 2006 |
| The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic in |
| 7033848 |
Light emitting device and method of manufacturing the same |
April 25, 2006 |
| A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating |
| 6950168 |
Semiconductor device with capacitor formed around contact hole |
September 27, 2005 |
| A method of forming a storage capacitor in an IPS liquid crystal display device is proposed, and a technique of forming a pixel region having a high aperture ratio is provided. An anodic oxidation process at an applied voltage/voltage supply time ratio of 11 V/min is performed for insula |
| 6929986 |
Semiconductor device, display device, and method of manufacturing the same |
August 16, 2005 |
| In order to eliminate the disconnection of a pixel electrode caused by a change in shape of an interlayer insulating film at the ends of metal wiring, a resin film is formed at the ends of the metal wiring. Because of the resin film at the ends of the metal wiring, the step difference of |
| 6913956 |
Semiconductor device and method of manufacturing the same |
July 5, 2005 |
| The present invention is characterized in that a semiconductor film containing a rare gas element is formed on a crystalline semiconductor film obtained by using a catalytic element via a barrier layer, and the catalytic element is moved from the crystalline semiconductor film to the |
| 6900460 |
Semiconductor device and method of manufacturing the same |
May 31, 2005 |
| The present invention provides the structure and manufacturing method of a semiconductor device that consumes small power even when a screen is made to be larger. A signal wiring line or a part of a gate wiring line is formed from a low resistant material (typically aluminum) and p-chann |
| 6884664 |
Semiconductor device and method of manufacturing the same |
April 26, 2005 |
| According to the present invention, a pixel TFT (an n-channel TFT) having a considerably low OFF current value and a high ratio of an ON current value to an OFF current value can be realized. In a pixel portion, an electrode having a taper portion with a width of 1 .mu.m or more is forme |
| 6861710 |
Light emitting device and method of manufacturing the same |
March 1, 2005 |
| A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating |
| 6861670 |
Semiconductor device having multi-layer wiring |
March 1, 2005 |
| The object is to pattern extremely fine integrated circuits by forming fine contact holes. The dry etching method is employed to form contact holes to pattern a wiring (114), using a mask made of metallic film (112) and an organic material as an inter-layer insulating film (111) for cove |
| 6856360 |
Electrooptical device, method of manufacturing the same, and electronic equipment |
February 15, 2005 |
| An AMLCD having high fineness and high contrast is realized. First, an interlayer film is provided on an element electrode, and an opening portion is formed in the interlayer film. Next, after a first metal layer is formed, an embedded insulating layer is formed. The embedded insulating |
| 6828586 |
Semiconductor device and method of manufacturing the same |
December 7, 2004 |
| A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gale electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low |
| 6822264 |
Light emitting device |
November 23, 2004 |
| The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of |
| 6777716 |
Semiconductor display device and method of manufacturing therefor |
August 17, 2004 |
| In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. |
| 6713323 |
Semiconductor device and method of manufacturing the same |
March 30, 2004 |
| A semiconductor device is manufactured by a method in which the number of heat treatments at a high temperature (600.degree. C. or higher) is reduced to thereby achieve a process at a low temperature (600.degree. C. or lower), and a simplified process and improvement in throughput are |
| 6707068 |
Semiconductor device and method of manufacturing the same |
March 16, 2004 |
| A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low |
| 6690434 |
Active matrix liquid crystal display device |
February 10, 2004 |
| An active matrix liquid crystal display device capable of good quality image display is provided by disposing a shielding film on the active matrix substrate side and a shielding film on the opposing substrate side as overlapped. The active matrix liquid crystal display device is cha |
| 6690034 |
Light emitting device |
February 10, 2004 |
| There is provided a light emitting device including a TFT having a high driving capacity (on current) and high reliability in a driver circuit and a TFT in which an off current is reduced in a pixel portion. In manufacturing the TFTs, after the TFT having an LDD region is formed, a p |
| 6686605 |
Semiconductor device, display device, and method of manufacturing the same |
February 3, 2004 |
| In order to eliminate the disconnection of a pixel electrode caused by a change in shape of an interlayer insulating film at the ends of metal wiring, a resin film is formed at the ends of the metal wiring. Because of the resin film at the ends of the metal wiring, the step difference of |
| 6677613 |
Semiconductor device and method of fabricating the same |
January 13, 2004 |
| There is provided an active matrix type display device in which the display device is formed of a driver circuit with an insulated gate FET capable of operating at high speed, and even if an area of a pixel electrode per unit pixel is made small, sufficient storage capacitance can be obt |
| 6630977 |
Semiconductor device with capacitor formed around contact hole |
October 7, 2003 |
| A method of forming a storage capacitor in an IPS liquid crystal display device is proposed, and a technique of forming a pixel region having a high aperture ratio is provided. An anodic oxidation process at an applied voltage/voltage supply time ratio of 11 V/min is performed for insula |
| 6613620 |
Semiconductor device and method of manufacturing the same |
September 2, 2003 |
| A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low |
| 6576926 |
Semiconductor device and fabrication method thereof |
June 10, 2003 |
| This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved |
| 6576924 |
Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrat |
June 10, 2003 |
| A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating fi |
| 6531993 |
Active matrix type display device |
March 11, 2003 |
| An active matrix type display device comprising: a substrate; a plurality of source signal lines and a plurality of gate signal lines formed over the substrate; a plurality of pixel TFTs formed over the substrate; a plurality of pixel electrodes electrically connected to said plurali |
| 5976988 |
Etching material and etching method |
November 2, 1999 |
| An alumina film, a silicon oxide film, and a silicon nitride film formed on a substrate containing a large amount of alumina are etched by using an etching material in which the concentration of ammonium fluoride, which is a component of BHF, is set low. Etching is performed by using an |
| 5818557 |
Liquid-crystal electro-optical apparatus and method of manufacturing the same |
October 6, 1998 |
| A liquid crystal device comprising:a pair of substrates having an electrode arrangement thereon;an orientation control means provided on at least one of said substrates; anda ferroelectric or antiferroelectric liquid crystal layer interposed between said substrates, said liquid crystal layer |
