Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Mueller; Carl A.
Address:
Hedingen, CH
No. of patents:
8
Patents:












Patent Number Title Of Patent Date Issued
5602080 Method for manufacturing lattice-matched substrates for high-T.sub.c superconductor films February 11, 1997
This method for manufacturing lattice-matched substrates for high-T.sub.c superconductors employs at least two materials chosen from the group of known suitable substrate materials, of which one has a lattice constant smaller than the lattice constant(s) of the perovskite subcell of the
5528052 Superconductive-channel electric field-effect drive June 18, 1996
Proposed is a method for operating a field-effect device comprised of a superconducting current channel having source and drain electrodes connected thereto, said superconducting current channel being separated from a gate electrode by an insulating layer, where the resistance of said
5439876 Method of making artificial layered high T.sub.c superconductors August 8, 1995
A method for making layered structures of artificial high T.sub.c superconductor compounds by which on top of a seed crystal having a lattice structure matching the lattice structure of the superconductor compound to be made, oxide layers of all constituent components are epitaxially
5401714 Field-effect device with a superconducting channel March 28, 1995
A field-effect structure formed on a substrate and comprising a channel with source and drain as well as a gate that is separated from the channel by an insulating layer. The channel is made of a high T.sub.c metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10.
5382565 Superconducting field-effect transistors with inverted MISFET structure January 17, 1995
This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5)
5376569 Superconducting field-effect transistors with inverted MISFET structure and method for making th December 27, 1994
This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5)
5278136 Method for making a superconducting field-effect transistor with inverted MISFET structure January 11, 1994
This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5)
4647954 Low temperature tunneling transistor March 3, 1987
The transistor comprises two electrodes, source (12) and drain (13), with a semiconductor tunnel channel (11) arranged therebetween. A gate (14) for applying control signals is coupled to the channel. The semiconductor, at low temperatures, behaves like an insulator with a low barrier (s










 
 
  Recently Added Patents
Washing-up bowl
Solar energy converter with improved photovoltaic efficiency, frequency conversion and thermal management permitting super highly concentrated collection
Method of preparing MgB.sub.2 superconducting wire and the MgB.sub.2 superconducting wire prepared thereby
Method for producing purified influenza virus antigen
Method for transmitting a signal from a transmitter to a receiver in a power line communication network, transmitter, receiver, power line communication modem and power line communication syst
Configurable caged ball insert for a downhole tool
Products for animal use including humans having a certificate verifying at least one of efficacy or safety, and methods of providing such certificates
  Randomly Featured Patents
Process for the production of substituted aromatic hydrocarbons from corresponding anilines by dediazoniation
Centrifugal wafer processor
Silicone pressure sensitive adhesives
Magneto-optical information reproducing apparatus in which the azimuth angle of the transmission axis of an analyzer is optimized so that the C/N ratio of a reproducing signal is maximum
Solar light
Method for managing memory access and task distribution on a multi-processor storage device
Relative motion cancelling platform for surgery
Wind power generation system and control method thereof
Shadow mask having slotted skirt portion
Power window controller