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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Mueller; Carl A.
Address:
Hedingen, CH
No. of patents:
8
Patents:












Patent Number Title Of Patent Date Issued
5602080 Method for manufacturing lattice-matched substrates for high-T.sub.c superconductor films February 11, 1997
This method for manufacturing lattice-matched substrates for high-T.sub.c superconductors employs at least two materials chosen from the group of known suitable substrate materials, of which one has a lattice constant smaller than the lattice constant(s) of the perovskite subcell of the
5528052 Superconductive-channel electric field-effect drive June 18, 1996
Proposed is a method for operating a field-effect device comprised of a superconducting current channel having source and drain electrodes connected thereto, said superconducting current channel being separated from a gate electrode by an insulating layer, where the resistance of said
5439876 Method of making artificial layered high T.sub.c superconductors August 8, 1995
A method for making layered structures of artificial high T.sub.c superconductor compounds by which on top of a seed crystal having a lattice structure matching the lattice structure of the superconductor compound to be made, oxide layers of all constituent components are epitaxially
5401714 Field-effect device with a superconducting channel March 28, 1995
A field-effect structure formed on a substrate and comprising a channel with source and drain as well as a gate that is separated from the channel by an insulating layer. The channel is made of a high T.sub.c metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10.
5382565 Superconducting field-effect transistors with inverted MISFET structure January 17, 1995
This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5)
5376569 Superconducting field-effect transistors with inverted MISFET structure and method for making th December 27, 1994
This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5)
5278136 Method for making a superconducting field-effect transistor with inverted MISFET structure January 11, 1994
This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5)
4647954 Low temperature tunneling transistor March 3, 1987
The transistor comprises two electrodes, source (12) and drain (13), with a semiconductor tunnel channel (11) arranged therebetween. A gate (14) for applying control signals is coupled to the channel. The semiconductor, at low temperatures, behaves like an insulator with a low barrier (s










 
 
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