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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Motoki; Kensaku
Address:
Itami, JP
No. of patents:
23
Patents:












Patent Number Title Of Patent Date Issued
7968864 Group-III nitride light-emitting device June 28, 2011
A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more.
7928447 GaN crystal substrate, fabricating method of GaN crystal substrate, and light-emitting device April 19, 2011
A GaN crystal substrate is provided, which has a diameter of not less than 20 mm and a thickness of not less than 70 .mu.m and not more than 450 .mu.m, and has a light absorption coefficient of not less than 7 cm.sup.-1 and not more than 68 cm.sup.-1 for light in the wavelength range
7919831 Nitride semiconductor device having oxygen-doped N-type gallium nitride freestanding single crys April 5, 2011
The present invention is a nitride semiconductor device including an n-type gallium nitride single crystal substrate, an epitaxially grown nitride film on the substrate, and electrodes deposited on a top and a bottom of the substrate. In order to produce the substrate, oxygen is dope
7915635 Semiconductor light-emitting element and substrate used in formation of the same March 29, 2011
For a semiconductor laser, a stacked member comprising an active layer is formed on the surface of a GaN single-crystal substrate, a defect aggregation portion is formed on the rear face of the GaN single-crystal substrate, and an electrode is formed so as to be electrically connected
7903710 Nitride semiconductor light-emitting device March 8, 2011
A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconduc
7903707 Nitride semiconductor light-emitting device March 8, 2011
A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconduc
7858502 Fabrication method and fabrication apparatus of group III nitride crystal substance December 28, 2010
A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication
7692200 Nitride semiconductor light-emitting device April 6, 2010
A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconduc
7667298 Oxygen-doped n-type gallium nitride freestanding single crystal substrate February 23, 2010
Oxygen is doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases to the seed crystal, growing a non-C-plane gallium nitride crystal on the seed crystal and allowing oxygen to infiltrate via a non-C-plane surface to the g
7589000 Fabrication method and fabrication apparatus of group III nitride crystal substance September 15, 2009
A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication
7521339 GaN single crystal substrate and method of making the same April 21, 2009
The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitax
7504323 GaN single crystal substrate and method of making the same March 17, 2009
The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitax
7473315 Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate, method of growing Al.sub.xIn.sub.yGa.su January 6, 2009
A low dislocation density Al.sub.xIn.sub.yGa.sub.1-x-yN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing an Al.sub.xIn.sub.yGa.sub.1-x-yN crystal on a facet-growth condition, forming repe
7470970 Oxygen-doped n-type gallium nitride freestanding single crystal substrate December 30, 2008
Oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or
7357837 GaN single crystal substrate and method of making the same April 15, 2008
The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitax
7012318 Oxygen-doped n-type gallium nitride freestanding single crystal substrate March 14, 2006
Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plan
6773504 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium August 10, 2004
Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plan
6693021 GaN single crystal substrate and method of making the same February 17, 2004
The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitax
6509651 Substrate-fluorescent LED January 21, 2003
A substrate-fluorescent LED having a fluorescent-impurity doped substrate and an epitaxial emission structure including an active layer and being made on the substrate. The epitaxial emission structure emits blue or green light corresponding to the band gap of the active layer. The s
6468882 Method of producing a single crystal gallium nitride substrate and single crystal gallium nitrid October 22, 2002
GaN single crystal substrates are produced by slicing a GaN single crystal ingot in the planes parallel to the growing direction. Penetration dislocations which have been generated in the growing direction extend mainly in the bulk of the GaN substrate. A few of the threading disloca
6468347 Method of growing single crystal GaN, method of making single crystal GaN substrate and single c October 22, 2002
A GaN single crystal is grown by synthesizing GaN in vapor phase, piling a GaN crystal on a substrate, producing a three-dimensional facet structure including facets in the GaN crystal without making a flat surface, maintaining the facet structure without burying the facet structure, and
6413627 GaN single crystal substrate and method of producing same July 2, 2002
A freestanding GaN single crystal substrate is made by the steps of preparing a (111) GaAs single crystal substrate, forming a mask having periodically arranged windows on the (111) GaAs substrate, making thin GaN buffer layers on the GaAs substrate in the windows of the mask, growing a
5970314 Process for vapor phase epitaxy of compound semiconductor October 19, 1999
A process for forming a high quality epitaxial compound semiconductor layer of indium gallium nitride In.sub.x Ga.sub.1-x N, (where 0<x<1) on a substrate. A first gas including indium trichloride (InCl.sub.3) and a second gas including ammonia (NH.sub.3) are introduced into a react










 
 
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