| Patent Number |
Title Of Patent |
Date Issued |
| 7968864 |
Group-III nitride light-emitting device |
June 28, 2011 |
| A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. |
| 7928447 |
GaN crystal substrate, fabricating method of GaN crystal substrate, and light-emitting device |
April 19, 2011 |
| A GaN crystal substrate is provided, which has a diameter of not less than 20 mm and a thickness of not less than 70 .mu.m and not more than 450 .mu.m, and has a light absorption coefficient of not less than 7 cm.sup.-1 and not more than 68 cm.sup.-1 for light in the wavelength range |
| 7919831 |
Nitride semiconductor device having oxygen-doped N-type gallium nitride freestanding single crys |
April 5, 2011 |
| The present invention is a nitride semiconductor device including an n-type gallium nitride single crystal substrate, an epitaxially grown nitride film on the substrate, and electrodes deposited on a top and a bottom of the substrate. In order to produce the substrate, oxygen is dope |
| 7915635 |
Semiconductor light-emitting element and substrate used in formation of the same |
March 29, 2011 |
| For a semiconductor laser, a stacked member comprising an active layer is formed on the surface of a GaN single-crystal substrate, a defect aggregation portion is formed on the rear face of the GaN single-crystal substrate, and an electrode is formed so as to be electrically connected |
| 7903710 |
Nitride semiconductor light-emitting device |
March 8, 2011 |
| A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconduc |
| 7903707 |
Nitride semiconductor light-emitting device |
March 8, 2011 |
| A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconduc |
| 7858502 |
Fabrication method and fabrication apparatus of group III nitride crystal substance |
December 28, 2010 |
| A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication |
| 7692200 |
Nitride semiconductor light-emitting device |
April 6, 2010 |
| A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconduc |
| 7667298 |
Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
February 23, 2010 |
| Oxygen is doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases to the seed crystal, growing a non-C-plane gallium nitride crystal on the seed crystal and allowing oxygen to infiltrate via a non-C-plane surface to the g |
| 7589000 |
Fabrication method and fabrication apparatus of group III nitride crystal substance |
September 15, 2009 |
| A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication |
| 7521339 |
GaN single crystal substrate and method of making the same |
April 21, 2009 |
| The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitax |
| 7504323 |
GaN single crystal substrate and method of making the same |
March 17, 2009 |
| The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitax |
| 7473315 |
Al.sub.xIn.sub.yGa.sub.1-x-yN mixture crystal substrate, method of growing Al.sub.xIn.sub.yGa.su |
January 6, 2009 |
| A low dislocation density Al.sub.xIn.sub.yGa.sub.1-x-yN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing an Al.sub.xIn.sub.yGa.sub.1-x-yN crystal on a facet-growth condition, forming repe |
| 7470970 |
Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
December 30, 2008 |
| Oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or |
| 7357837 |
GaN single crystal substrate and method of making the same |
April 15, 2008 |
| The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitax |
| 7012318 |
Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
March 14, 2006 |
| Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plan |
| 6773504 |
Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium |
August 10, 2004 |
| Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plan |
| 6693021 |
GaN single crystal substrate and method of making the same |
February 17, 2004 |
| The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitax |
| 6509651 |
Substrate-fluorescent LED |
January 21, 2003 |
| A substrate-fluorescent LED having a fluorescent-impurity doped substrate and an epitaxial emission structure including an active layer and being made on the substrate. The epitaxial emission structure emits blue or green light corresponding to the band gap of the active layer. The s |
| 6468882 |
Method of producing a single crystal gallium nitride substrate and single crystal gallium nitrid |
October 22, 2002 |
| GaN single crystal substrates are produced by slicing a GaN single crystal ingot in the planes parallel to the growing direction. Penetration dislocations which have been generated in the growing direction extend mainly in the bulk of the GaN substrate. A few of the threading disloca |
| 6468347 |
Method of growing single crystal GaN, method of making single crystal GaN substrate and single c |
October 22, 2002 |
| A GaN single crystal is grown by synthesizing GaN in vapor phase, piling a GaN crystal on a substrate, producing a three-dimensional facet structure including facets in the GaN crystal without making a flat surface, maintaining the facet structure without burying the facet structure, and |
| 6413627 |
GaN single crystal substrate and method of producing same |
July 2, 2002 |
| A freestanding GaN single crystal substrate is made by the steps of preparing a (111) GaAs single crystal substrate, forming a mask having periodically arranged windows on the (111) GaAs substrate, making thin GaN buffer layers on the GaAs substrate in the windows of the mask, growing a |
| 5970314 |
Process for vapor phase epitaxy of compound semiconductor |
October 19, 1999 |
| A process for forming a high quality epitaxial compound semiconductor layer of indium gallium nitride In.sub.x Ga.sub.1-x N, (where 0<x<1) on a substrate. A first gas including indium trichloride (InCl.sub.3) and a second gas including ammonia (NH.sub.3) are introduced into a react |
