| Patent Number |
Title Of Patent |
Date Issued |
| 7553685 |
Method of fabricating light-emitting device and light-emitting device |
June 30, 2009 |
| A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers |
| 7265064 |
Semiconductor device with porous interlayer insulating film |
September 4, 2007 |
| In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including the semiconductor cir |
| 7041529 |
Light-emitting device and method of fabricating the same |
May 9, 2006 |
| In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between |
| 6995401 |
Light emitting device and method of fabricating the same |
February 7, 2006 |
| A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting dev |
| 6962882 |
Method of fabricating a semiconductor device having a nanoparticle porous oxide film |
November 8, 2005 |
| While a crucible containing an Si material and a substrate to be processed are set in a chamber, Ar gas is supplied into the chamber and the Si material is evaporated by heating, thereby forming a nanoparticle thin film of Si on the substrate. This substrate is then annealed in an oxygen |
| 6847056 |
Light emitting device |
January 25, 2005 |
| A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major |
| 6812163 |
Semiconductor device with porous interlayer insulating film |
November 2, 2004 |
| In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate. then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including the semiconductor ci |
| 6787383 |
Light-emitting device and method for manufacturing the same |
September 7, 2004 |
| The light-emitting device 100 has an ITO electrode layer 8 for applying drive voltage for light emission to a light emitting layer section 24, where the light from the light emitting layer section 24 is extracted as being passed through the ITO electrode layer 8. Between the light emitti |
| 6566756 |
Semiconductor device with porous interlayer film of a range of average diameter having partially |
May 20, 2003 |
| In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate. Then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including the semiconductor ci |
