Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Morimoto; Nobuyuki
Address:
Tokyo, JP
No. of patents:
19
Patents:












Patent Number Title Of Patent Date Issued
8183133 Method for producing semiconductor substrate May 22, 2012
There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, an
8048769 Method for producing bonded wafer November 1, 2011
There is provided a bonded wafer having excellent thickness uniformity after thinning but also good surface roughness and being less in defects. In the production method of a bonded wafer by bonding a wafer for active layer to a wafer for support substrate and thinning the wafer for acti
8048767 Bonded wafer and method for producing bonded wafer November 1, 2011
A bonded wafer is produced by directly bonding a silicon wafer for active layer and a silicon wafer for support substrate without an insulating film and thinning the silicon wafer for active layer to a given thickness, in which a silicon wafer cut out from an ingot at a cutting angle
7951692 Method of producing semiconductor substrate having an SOI structure May 31, 2011
There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not
7927957 Method for producing bonded silicon wafer April 19, 2011
A bonded silicon wafer is produced by a method including an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO
7902043 Method of producing bonded wafer March 8, 2011
A method of producing a bonded wafer, comprising: performing bonding of a first semiconductor wafer and a second semiconductor wafer without interposing an insulation film in between; and performing thinning of the second semiconductor wafer, wherein surface portions at least including
7858494 Laminated substrate manufacturing method and laminated substrate manufactured by the method December 28, 2010
Adhesion of particles due to static buildup during a laminated substrate manufacturing process is constrained, so as to reduce generation of a void or a blister in a lamination step and improve yield. A laminate 13 is formed by superimposing a first semiconductor substrate 11, which is
7851337 Method for producing semiconductor substrate December 14, 2010
There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, an
7799655 Method for evaluation of bonded wafer September 21, 2010
A bonded wafer formed by directly bonding a wafer for active layer and a wafer for support substrate without an insulating film and thinning the wafer for active layer is evaluated by a method comprising steps of removing native oxide from a surface of an active layer in the bonded w
7795117 Method of producing semiconductor substrate having an SOI structure September 14, 2010
There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not
7713838 SOI wafer and its manufacturing method May 11, 2010
Since a supporting wafer contains boron of 9.times.10.sup.18 atoms/cm.sup.3 or more, therefore a part of the metal impurities in an active layer wafer and the metal impurities in the wafer can be captured by the boron during the heat treatment for bonding. As a result, metal contamin
7563697 Method for producing SOI wafer July 21, 2009
Hydrogen gas is ion-implanted into a silicon wafer for active layer via an insulating film, and thus ion-implanted wafer is then bonded with a supporting wafer via an insulating film interposed therebetween. This bonded wafer is heated to 500.degree. C., so that a part of the bonded
7544583 SOI wafer and its manufacturing method June 9, 2009
Since a supporting wafer contains nitrogen of 1.times.10.sup.14 atmos/cm.sup.3 and interstitial oxygen atom concentration, Oi, (old ASTM) of 13.times.10.sup.17 atoms/cm.sup.3, therefore a part of the metal impurities in an active layer wafer and the metal impurities in a bonded wafer
7534728 Process for cleaning silicon substrate May 19, 2009
In the production process of an SOI substrate using a hydrogen ion implantation method, a process is provided for cleaning the substrate which can prevent formation of voids when bonding substrates and formation of blistering after exfoliation. In the process for cleaning, cleaning o
7510948 Method for producing SOI wafer March 31, 2009
Hydrogen gas is ion-implanted into a wafer for active layer via an oxide film. The wafer for active layer is bonded with a supporting wafer using the oxide film as the bonding surface. The bonded wafer is subjected to a heat treatment at the temperature in a range of 400.degree. C. to
7507641 Method of producing bonded wafer March 24, 2009
A bonded wafer is produced by implanting ions of a light element into a wafer for active layer to a predetermined depth position to form an ion implanted layer, bonding the wafer for active layer to a wafer for support substrate directly or through an insulating film of not more than
7494899 Method for manufacturing semiconductor substrate February 24, 2009
This method for manufacturing a semiconductor substrate is characterized in that the method includes: a step of ion-implanting light element to a predetermined depth position in a single-crystal wafer of which a surface is a cleavage plane; and a step of heat-treating the single-crystal
7446016 Method for producing bonded wafer November 4, 2008
A bonded SOI substrate having an active layer which is free from crystal defects is obtained by adding more than 9.times.10.sup.18 atoms/cm.sup.3 of boron to a wafer for active layer (10). Since the boron concentration in the wafer for active layer is high, a silicon oxide film is formed
7358147 Process for producing SOI wafer April 15, 2008
There is provided a process for producing an SOI wafer in which, when producing an SOI wafer using Smart Cut technology, the surface can be smoothed after cleaving, the thickness of the SOI layer can be reduced, and the film thickness of the SOI wafer can be made uniform. In this pro










 
 
  Recently Added Patents
Using interrupted through-silicon-vias in integrated circuits adapted for stacking
Transparent conductive structure
Conversion of 5-(chloromethyl)-2-furaldehyde into 5-methyl-2-furoic acid and derivatives thereof
Flash drive
Panel for decoration
Lifting apparatus
Method and apparatus for radio antenna frequency tuning
  Randomly Featured Patents
Method for manufacturing a surface covering product having a controlled gloss surface coated wearlayer
Model driven software
Fluid pressure control device for vehicle braking systems
Wheel cover simulating cast aluminum wheel
Body wrap for use in diagnostic procedure
Method for wire-bonding a covered wire
Semiconductor package with through silicon vias and method for making the same
Semiconductor memory device with mode register and method for controlling deep power down mode therein
Mesh network within a device
Well string assembly