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Moran; John D.
Mesa, AZ
No. of patents:

Patent Number Title Of Patent Date Issued
7820473 Schottky diode and method of manufacture October 26, 2010
A Schottky diode capable of sustaining a voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer of N-type conductivity is disposed on a semiconductor substrate of N-type conductivity. A guard ring of P-type conductivity extends into the epitaxial
5773368 Method of etching adjacent layers June 30, 1998
A method of manufacturing a semiconductor component includes sputtering a first metal layer (16) over a substrate (11), sputtering a second metal layer (17) over the first metal layer (16), selectively etching the second metal layer (17) versus the first metal layer (16), selectively etc
5075259 Method for forming semiconductor contacts by electroless plating December 24, 1991
Semiconductor device structures having very smooth surfaces and very high doping levels of opposite types present on the same wafer may be plated in the same electroless plating bath without differentiation between the N and P regions or rough and smooth surface regions. This is achieved
4977107 Method for manufacturing semiconductor rectifier December 11, 1990
Rectifiers of excellent characteristics may be more economically fabricated by a process in which a cavity is first etched in a non-epitaxial semiconductor wafer to a depth in the range of typically 15-25 percent of the initial wafer thickness. Simultaneous diffusion of N and P type

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