| Patent Number |
Title Of Patent |
Date Issued |
| 7049243 |
Surface processing method of a specimen and surface processing apparatus of the specimen |
May 23, 2006 |
| A plasma processing method for etching a sample having a gate oxide film which generates a plasma in a vacuum chamber using electromagnetic waves, applies an rf bias power to the sample, turns off the rf bias power before a charged voltage of the sample reaches a breakdown voltage of the |
| 6849191 |
Method and apparatus for treating surface of semiconductor |
February 1, 2005 |
| According to the present invention, there is provided a sample surface treating apparatus for processing a fine pattern by plasma etching, including a stage provided in a chamber, on which a sample to be subjected to a surface treatment is placed; etching gas supply source for contin |
| 6767838 |
Method and apparatus for treating surface of semiconductor |
July 27, 2004 |
| A method and apparatus of treating a surface of a sample. A sample is arranged on a stage provided in a chamber, an etching gas is continuously supplied into the chamber and a plasma is generated from the etching gas. An rf bias at a frequency of 100 kHz or higher is applied to the stage |
| 6677244 |
Specimen surface processing method |
January 13, 2004 |
| A plasma processing method for etching a sample having a gate oxide film includes generating a plasma in a vacuum chamber using electromagnetic waves, applying an rf bias power to the sample, turning off the rf bias power before a charged voltage of the sample reaches a breakdown voltage |
| 6492277 |
Specimen surface processing method and apparatus |
December 10, 2002 |
| Electrical damage to semiconductor elements in the plasma etching thereof is suppressed. In processing of a fine pattern by plasma etching, the high frequency power supply to be applied to the specimen is turned off before the charge potential at a portion of the pattern reaches the brea |
| 6309980 |
Semiconductor integrated circuit arrangement fabrication method |
October 30, 2001 |
| To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable sta |
| 6231777 |
Surface treatment method and system |
May 15, 2001 |
| A pulse voltage of duty ratio 5% or below and repetition frequency 400 KHz or above is supplied in order to suppress the notch, charge build-up damage, subtrench and bowing due to the electron shading phenomenon. Thus, a cycle for accelerating electrons occurs in the substrate bias, so t |
| 6074958 |
Semiconductor integrated circuit arrangement fabrication method |
June 13, 2000 |
| To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable sta |
| 5962347 |
Semiconductor integrated circuit arrangement fabrication method |
October 5, 1999 |
| To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable sta |
| 5874013 |
Semiconductor integrated circuit arrangement fabrication method |
February 23, 1999 |
| To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable sta |
| 5554257 |
Method of treating surfaces with atomic or molecular beam |
September 10, 1996 |
| A molecular or atomic beam for cleaning or etching semiconductor substrates, or for forming a thin film on a semiconductor substrate is formed by generating a chemical reaction between at least two gases introduced into a reaction chamber. The products of the chemical reaction, and o |
| 5462635 |
Surface processing method and an apparatus for carrying out the same |
October 31, 1995 |
| A surface processing method capable of processing the surface of a work at a high processing rate without damaging the surface of the work uses, in combination, a fast processing technique using charged particles and a moderate processing technique using neutral particles that scarcely d |
| 5284544 |
Apparatus for and method of surface treatment for microelectronic devices |
February 8, 1994 |
| An apparatus for surface treatment according to the present invention used for carrying out dry etching, thin film deposition and so forth is provided with a neutral beam etching apparatus in order to improve etching rate. In an embodiment, microwave wave-guides forming a duplex tube, a |
| 5241186 |
Surface treatment method and apparatus therefor |
August 31, 1993 |
| A method of preventing damages of a semiconductor having an insulator film at its surface caused by holes induced in the insulator film and move to and are trapped at or near the interface between the insulator film and a substrate upon applying surface treatment for the surface of the |
| 5140272 |
Method of semiconductor surface measurment and an apparatus for realizing the same |
August 18, 1992 |
| A method of semiconductor surface measurement for measuring electrical characteristics of a surface of a semiconductor body is disclosed, by which an electrode, whose surface, which is opposite to the surface of a semiconductor substrate, is flat and the gap between the electrode and the |
| 5108778 |
Surface treatment method |
April 28, 1992 |
| Disclosed are a surface treatment method and apparatus in which an active species beam that contains active species having translational energy in a range of 0.01-100 eV as at least a partial constituent thereof constructs at least a part of treatment means. |
