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Inventor:
Mizoguchi; Yasutaka
Address:
Tokyo, JP
No. of patents:
1
Patents:












Patent Number Title Of Patent Date Issued
8168539 Method for forming tungsten film at a surface of a processing target material, film-forming appa May 1, 2012
A tungsten film with a lower specific resistance and a lower fluorine concentration over its boundary with the base barrier layer, which adheres to the barrier layer with a high level of reliability, compared to tungsten films formed through methods in the related art, is formed. The










 
 
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