| Patent Number |
Title Of Patent |
Date Issued |
| 7553716 |
Method for manufacturing a semiconductor thin film |
June 30, 2009 |
| A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the |
| 7297978 |
Semiconductor thin film and semiconductor device |
November 20, 2007 |
| After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since |
| 6822262 |
Semiconductor thin film and semiconductor device |
November 23, 2004 |
| After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since |
| 6720575 |
Semiconductor device with a semiconductor layer over a surface having a recess pitch no smaller |
April 13, 2004 |
| An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100. Recesses 105a to 105d corresponding to recesses 101a to 101d of the substrate 100 are formed on the surface of the insulating film 103. The surface of this insulating |
| 6693300 |
Semiconductor thin film and semiconductor device |
February 17, 2004 |
| A semiconductor thin film having extremely superior crystallinity and a semiconductor device using the semiconductor thin film having high performance are provided. The semiconductor thin film is manufactured in such a manner that after an amorphous semiconductor thin film is crystal |
| 5284779 |
Method of forming organic charge-transfer thin films |
February 8, 1994 |
| Superconducting or conducting organic charge-transfer complex film is epitaxially grown on a substrate which has been given an oriented surface by applying a stearic acid film. The periodic charge distribution over the oriented surface regulates the formation of the complex film to arran |
