| Patent Number |
Title Of Patent |
Date Issued |
| 7562821 |
Position measurement system |
July 21, 2009 |
| A position measurement system, includes: a plurality of concentric pattern projectors each for projecting a concentric pattern; an image sensor that has a sensor plane and that detects the concentric pattern; and an arithmetic unit that calculates a position of the image sensor and a |
| 7554854 |
Method for deleting data from NAND type nonvolatile memory |
June 30, 2009 |
| To provide a method of releasing charges which have been injected into charge accumulating layers of nonvolatile memory elements without using a substrate terminal such as a p well or an n well, as a method for deleting data from a NAND-type nonvolatile memory. In the method for dele |
| 7522159 |
Display appliance |
April 21, 2009 |
| A small-sized, light-weight display device having an audio output circuit is provided. A display device of the present invention has a flat speaker and an audio signal processing device is constructed from thin film semiconductor elements, typically, thin film transistors, on the display |
| 7518592 |
Liquid crystal display device |
April 14, 2009 |
| A liquid crystal display device with low power consumption is provided. In the liquid crystal display device having a source signal line driver circuit, a gate signal line driver circuit, a DAC controller, and a pixel portion and performing an image display using an n-bit (n is a natural |
| 7474418 |
Position measurement system |
January 6, 2009 |
| A position measurement system includes a photographing unit and an arithmetic processing unit. The photographing unit has a lens and a light-receiving element. The lens forms an optical ring image from light from a light source through spherical aberration. The light-receiving elemen |
| 7360708 |
Information processing method and system using terminal apparatus |
April 22, 2008 |
| An information processing method using a terminal apparatus, including: applying light with a concentric ring-like interference fringe pattern on one of subjects by using a pointer provided in the terminal apparatus; detecting the interference fringe pattern by using a detector; calc |
| 7332742 |
Display device and electronic apparatus |
February 19, 2008 |
| The invention provides a display device in which occurrence of a display defect called a ghost is prevented, and a driving method thereof, and a television set. According to the invention, a gate control signal (GWE) which has been one signal is divided into a first gate control signal |
| 7307463 |
Source follower, voltage follower, and semiconductor device |
December 11, 2007 |
| A source follower in which any one of the following three modes is selected by a plurality of switching elements: a first mode in which a first potential is supplied to a gate of a transistor and an input potential is supplied to a first electrode of a capacitor respectively and a se |
| 7268756 |
Liquid crystal display device and method of driving a liquid crystal display device |
September 11, 2007 |
| A liquid crystal display device having analog buffer circuits, which is reduced in luminance fluctuation is provided. A source signal line driver circuit has a plurality of analog buffer circuits, the plurality of source signal lines and the plurality of analog buffer circuits consti |
| 7184014 |
Liquid crystal display device |
February 27, 2007 |
| A liquid crystal display device with low power consumption is provided. In the liquid crystal display device having a source signal line driver circuit, a gate signal line driver circuit, a DAC controller, and a pixel portion and performing an image display using an n-bit (n is a natural |
| 7116748 |
Pulse output circuit, shift register and electronic equipment |
October 3, 2006 |
| A driver circuit of a display device, which includes TFTs of a single conductivity type and outputs an output signal with normal amplitude. A pulse is inputted to TFTs 101 and 104 to turn ON the TFTs and a potential of a node .alpha. is raised. When the potential of the node .alpha. |
| 7091749 |
Semiconductor device |
August 15, 2006 |
| A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot |
| 7084668 |
Semiconductor device |
August 1, 2006 |
| When a digital video signal inputted to a latch circuit is Hi electric potential, undesirably a current flows continuously for one horizontal period at maximum, and this causes a great increase in power consumption of a semiconductor device. Therefore an object of the present invention |
| 6847050 |
Semiconductor element and semiconductor device comprising the same |
January 25, 2005 |
| A semiconductor element which is capable of operating at a high speed, high in an electric current drive capability, and small in fluctuation among a plurality of elements, and a semiconductor device including the semiconductor element are provided. The semiconductor element has a first |
| 6813332 |
Pulse output circuit, shift register and electronic equipment |
November 2, 2004 |
| A driver circuit of a display device, which includes TFTs of a single conductivity type and outputs an output signal with normal amplitude. A pulse is inputted to TFTs 101 and 104 to turn ON the TFTs and a potential of a node .alpha. is raised. When the potential of the node .alpha. |
| 6788108 |
Semiconductor device |
September 7, 2004 |
| A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot |
| 6756816 |
Semiconductor device |
June 29, 2004 |
| When a digital video signal inputted to a latch circuit is Hi electric potential, undesirably a current flows continuously for one horizontal period at maximum, and this causes a great increase in power consumption of a semiconductor device. Therefore an object of the present invention i |
| 5814872 |
Integrated circuit and thin film integrated circuit |
September 29, 1998 |
| Each signal line connected to one light receiving element array is placed between switching transistors of the switching transistor array corresponding to another light receiving element array over the entire light receiving element arrays, so that the wiring capacity values occurrin |
| 5777669 |
Image reading device |
July 7, 1998 |
| An image reader device comprises photo sensing element arrays each of a plural number of blocks each consisting of a plural bits of photo sensing elements, a plural number of first switching elements, connected to the photo sensing elements, for transferring en bloc the charge of all bit |
| 5774180 |
Image sensor capable of producing an image signal free from an afterimage |
June 30, 1998 |
| Charges photoelectrically generated in reversely biased photodiodes are sequentially transferred through respective thin-film transistors to a driver IC. A plurality of capacitors are connected to the anodes of the respective photodiodes. During a charge reading period, a variable voltag |
| 5767559 |
Thin film type photoelectric conversion device |
June 16, 1998 |
| A thin-film type photoelectric conversion device for use in an image input unit of facsimile equipment, a scanner and the like, which uses a thin-film semiconductor as a phoconductive layer to reading not only a monochromatic image but also a color image with high resolution. A photo |
| 5552630 |
Thin film transistor having metallic light shield |
September 3, 1996 |
| A thin film transistor includes an insulating substrate, a gate electrode formed on the substrate, a first insulating layer formed on the gate electrode, a semiconductor layer formed on the first insulating layer over the gate electrode, a second insulating layer formed on the semiconduc |
| 5525813 |
Image sensor having TFT gate electrode surrounding the photoelectric conversion element |
June 11, 1996 |
| An image sensor is reduced in size by combining a photoelectric conversion element with a transfer element thin film transistor (TFT). The photoelectric conversion element comprises a lamination including a metal electrode, a photoconductive layer and a transparent electrode. The TFT |
| 5399889 |
Image sensor providing output image signal with reduced offset |
March 21, 1995 |
| An image sensor comprises photo sensing elements, having charge storage capability, for transducing received light into electrical quantities. First switching elements have charge storage capability for transferring the charge stored in the photo sensing elements. Second switching elemen |
| 5382975 |
Image reading apparatus |
January 17, 1995 |
| An image reading apparatus is disclosed which improves reading accuracy by eliminating the effect of crosstalk between neighboring signal lines and removing residual charge, which cause residual images, without complicating the configuration of the image processing circuit. The elimi |
| 5348892 |
Image sensor and method of manufacturing the same |
September 20, 1994 |
| An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the p |
| 5274250 |
Color image sensor with light-shielding layer |
December 28, 1993 |
| Disclosed is a color image sensor of the type that reads color images with the aid of filters that absorb light of different colors (e.g. red, green and blue) and that are provided over arrays of light-receiving devices formed in a plurality of rows on a common substrate. The color image |
| 5219771 |
Method of producing a thin film transistor device |
June 15, 1993 |
| A method of producing on a substrate at least one transistor having electrodes with low interelectrode capacitance, the method characterized by the steps of forming at least one transistor on a substrate, forming a guard conductor on the substrate, forming electrical connectors on the |
| 5198905 |
Image sensor having an electrical interference reducing wire structure |
March 30, 1993 |
| An image sensor having a photodetecting element array including a plurality of blocks linearly arrayed in a first scan direction, each block compromising a plurality of photodetecting elements, a plurality of switching elements for transferring charges generated in the photodetecting |
| 5196721 |
Image reading device |
March 23, 1993 |
| An image reading device comprises a number of photoelectric conversion elements arrayed in the main scan direction so as to generate charges corresponding to optical density information of each extremely small area of an image on an original, and thin film transistors respectively co |
| 5182625 |
Image sensor and method of manufacturing the same |
January 26, 1993 |
| An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the p |
| 5160836 |
Image sensor including a plurality of light-receiving arrays and method of driving the same |
November 3, 1992 |
| An image sensor including: a plurality of light-receiving element arrays; switching elements; first through third common connection lines; an electric charge storing unit; and a drive circuit. Each light-receiving element array extends in an auxiliary scanning direction and consists of a |
| 5136358 |
Multi-layered wiring structure |
August 4, 1992 |
| A multi-layered wiring structure includes a plurality of signal lines formed in a common layer and a shield line provided between any two of the lines in a separate layer, with an insulation layer being interposed, for absorbing electrical effects that will occur between the two signal l |
| 5070236 |
Image sensor with load capacitors formed from common and individual electrodes |
December 3, 1991 |
| An image sensor comprises a light-receiving element array, switching elements for transferring electric charges from the light-receiving element array, multilayer interconnection, load capacitors for storing the transferred electric charges, which includes one electrode which is an i |
| 5065171 |
Image sensor with uniformly dispersed storage capacitors |
November 12, 1991 |
| A thin film transistor driven image sensor. The image sensor has a plurality of photodiodes. Each photodiode is connected to a storage load capacitor through a thin film transistor switching element. The photodiodes are arranged into a plurality of blocks. Each block is read out sequ |
