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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Mitani; Junichi
Address:
Kawasaki, JP
No. of patents:
10
Patents:












Patent Number Title Of Patent Date Issued
7910957 Semiconductor device March 22, 2011
A semiconductor device has a first and a second active regions of a first conductivity type disposed on a semiconductor substrate, a third and a fourth active regions of a second conductivity type disposed on the semiconductor substrate, the second and the fourth active regions having
7192862 Semiconductor device and method of manufacturing the same March 20, 2007
A manufacturing method of a semiconductor device comprises the steps of forming an etching stop insulating film (18) that covers at least side surfaces of a wiring (16) in a first region (2) and a first-stage conductive plug (15b) in a second region (3), then forming insulating films
7075182 Semiconductor device July 11, 2006
The semiconductor device comprises a first conductive pattern 42, a second conductive pattern 42 formed adjacent to the first conductive pattern 42, a first conductor plug 28 formed below a prescribed region of the first conductive pattern 42, a second conductor plug 62.sub.n formed over
7009234 Semiconductor device and method of manufacturing the same March 7, 2006
A manufacturing method of a semiconductor device comprises the steps of forming an etching stop insulating film (18) that covers at least side surfaces of a wiring (16) in a first region (2) and a first-stage conductive plug (15b) in a second region (3), then forming insulating films
6730574 Semiconductor device and method for fabricating the same May 4, 2004
The semiconductor device includes a MOSFET including a pair of impurity diffused regions formed on both sides of a gate formed on a semiconductor substrate; an insulation film covering a top of the MOSFET and having a through-hole opened on one of the impurity diffused regions formed in;
6727573 Semiconductor device having triple well structure April 27, 2004
The semiconductor device according to the present invention comprises: a semiconductor substrate 10 of a first conductivity type; a well 28 of a second conductivity type different from the first conductivity type formed in a region 18 surrounding a region 20 of the semiconductor substrat
6335552 Semiconductor device and method for fabricating the same January 1, 2002
The semiconductor device comprises a MOSFET including a pair of impurity diffused regions formed on both sides of a gate formed on a semiconductor substrate; an insulation film covering a top of the MOSFET and having a through-hole opened on one of the impurity diffused regions formed in
6309921 Semiconductor device and method for fabricating semiconductor device October 30, 2001
The semiconductor device comprises a semiconductor substrate 10 of a first conduction-type, first wells 20a, 20b of a second conduction-type formed in a first region on the primary surface of the semiconductor substrate 10, a second well 22a formed in a second region on the primary surfa
6242294 Method for fabricating a semiconductor device June 5, 2001
The semiconductor device according to the present invention comprises: a semiconductor substrate 10 of a first conductivity type; a well 28 of a second conductivity type different from the first conductivity type formed in a region 18 surrounding a region 20 of the semiconductor substrat
5780907 Semiconductor device having triple wells July 14, 1998
A semiconductor device including a semiconductor substrate 10 of a first conduction-type, first wells 20a, 20b of a second conduction-type formed in a first region on the primary surface of the semiconductor substrate 10, a second well 22a formed in a second region on the primary surface










 
 
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