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Mita; Keiji
Gunma, JP
No. of patents:

Patent Number Title Of Patent Date Issued
8232623 Semiconductor device July 31, 2012
A conventional semiconductor device has a problem that, when a vertical PNP transistor as a power semiconductor element is used in a saturation region, a leakage current into a substrate is generated. In a semiconductor device of the present invention, two P type diffusion layers as
8080863 Semiconductor device and method of manufacturing the same December 20, 2011
A conventional semiconductor device, for example, a lateral PNP transistor has a problem that it is difficult to obtain a desired current-amplification factor while maintaining a breakdown voltage characteristic without increasing the device size. In a semiconductor device, that is a
7808078 Semiconductor device and manufacturing method thereof October 5, 2010
A semiconductor integrated circuit is reduced in size by suppressing lateral extension of an impurity region when impurities in the impurity region are thermally diffused in a semiconductor substrate. A second photoresist is formed on an insulation film. The second photoresist is for
7619299 Semiconductor device and method of manufacturing the same November 17, 2009
In a semiconductor device of the present invention, an N type epitaxial layer is formed on a P type single crystal silicon substrate. In the substrate and the epitaxial layer, an N type buried diffusion layer is formed on a P type buried diffusion layer. With this structure, an upward

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