| Patent Number |
Title Of Patent |
Date Issued |
| 7312100 |
In situ patterning of electrolyte for molecular information storage devices |
December 25, 2007 |
| This invention pertains to methods assembly of organic molecules and electrolytes in hybrid electronic. In one embodiment, a method is provided that involves contacting a surface/electrode with a compound of formula: R-L.sup.2-M-L.sup.1-Z.sup.1 where Z.sup.1 is a surface attachment g |
| 7265375 |
Optoelectonic devices having arrays of quantum-dot compound semiconductor superlattices therein |
September 4, 2007 |
| Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically defined nano-chann |
| 7253466 |
Crossbar array microelectronic electrochemical cells |
August 7, 2007 |
| The present invention provides microelectronic electrochemical structures and related fabrication methods. A composite microelectronic structure is provided that includes first and second conductors dielectrically isolated from one another at a crossing thereof, the crossing surrounded |
| 7211458 |
Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related |
May 1, 2007 |
| A method of fabricating a semiconductor device includes forming a strained first semiconductor layer on an insulating layer that is between second semiconductor layers. The strained first semiconductor layer may be epitaxially grown from the second semiconductor layers to extend onto the |
| 6958485 |
Hybrid molecular memory devices and methods of use thereof |
October 25, 2005 |
| The present invention provides hybrid microelectronic memory device, comprising: (a) a substrate having a surface, a first region of first work function adjacent the surface, and a second region of second work function adjacent the surface and adjacent the first region; (b) a film compri |
| 6958270 |
Methods of fabricating crossbar array microelectronic electrochemical cells |
October 25, 2005 |
| The present invention provides microelectronic electrochemical structures and related fabrication methods. A composite microelectronic structure is provided that includes first and second conductors dielectrically isolated from one another at a crossing thereof, the crossing surrounded b |
| 6914256 |
Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein |
July 5, 2005 |
| Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically defined nano-channels |
| 6873020 |
High/low work function metal alloys for integrated circuit electrodes |
March 29, 2005 |
| Integrated circuit electrodes include an alloy of a first metal and a second metal having lower work function than the first metal. The second metal also may have higher oxygen affinity than the first metal. The first metal may be Ru, Ir, Os, Re and alloys thereof, and the second metal m |
| 6709929 |
Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographica |
March 23, 2004 |
| Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array of non-photolithographically defined nano-channels |
| 6674121 |
Method and system for molecular charge storage field effect transistor |
January 6, 2004 |
| A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules between a gate and channel of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthet |
