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Melas; Andreas A.
Burlington, MA
No. of patents:

Patent Number Title Of Patent Date Issued
5147688 MOCVD of indium oxide and indium/tin oxide films on substrates September 15, 1992
Disclosed is a metalorganic chemical vapor deposition (MOCVD) process of depositing an indium oxide or an indium/tin oxide film on a substrate using indium alkyl etherate or indium alkyl etherate and organotin compound precursors, respectively.
5120676 Use of phosphine and arsine compounds in chemical vapor deposition and chemical doping June 9, 1992
A MOCVD process for depositing an arsenic-containing film or a phosphorous-containing film utilizing a diprimary phosphine or arsine or an unsaturated hydrocarbon phosphine or arsine.
4792467 Method for vapor phase deposition of gallium nitride film December 20, 1988
A process for depositing a gallium nitride film on a substrate. A source compound is provided which has the formula:Each R is independently selected from alkyl groups having from 1 to about 4 carbon atoms. The source compound is conveyed into a deposition chamber containing a substrate.
4741894 Method of producing halide-free metal and hydroxides May 3, 1988
Niobium (V) and tantalum (V) halides are converted to Nb.sub.2 O.sub.5 and Ta.sub.2 O.sub.5 that are free of detectable levels of halide in a two step process. In the first step, the metal halide is reacted with an alcohol and with a replacement species, such as ammonia, which reacts wit
4740606 Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films April 26, 1988
Adduct of the formula:wherein each R is independently selected from lower alkyl having from 2 to about 4 carbon atoms, and a process for depositing gallium nitride, gallium arsenide, or gallium phosphide films, using the above adduct as a source of nitride (for the nitride film) and gall
4734514 Hydrocarbon-substituted analogs of phosphine and arsine, particularly for metal organic chemical March 29, 1988
Organometallic compounds having the formulas: ##STR1## wherein N is selected from phosphorus and arsenic, H is hydride, and X and Y are independently selected from hydride, lower alkyl cyclopentadienyl, and phenyl, except that Y cannot be hydrogen; andwherein x is an integer from 2 t
4720560 Hybrid organometallic compounds, particularly for metal organic chemical vapor deposition January 19, 1988
Compounds having the molecular formula:wherein x is an integer from 2 to 4 inclusive, each said R substituent is independently selected from hydride, lower alkyl, phenyl, alkyl-substituted phenyl, cyclopentadienyl, and alkyl substituted cyclopentadienyl, at least two of said R substituen
4506815 Bubbler cylinder and dip tube device March 26, 1985
An all welded square bottomed stainless steel cylinder and dip tube device for transferring by vapor deposition very reactive electronic grade organometallic liquid to a deposition system includes a top fill opening and inlet and outlet diaphragm valves, and is coated on the interior wit

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