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Inventor: Meiners; Larry G.
Address: San Diego, CA
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 4268844 |
Insulated gate field-effect transistors |
May 19, 1981 |
| An improved normally off insulated gate field-effect transistor capable of peration at frequencies in excess of 1 GHz wherein the substrate is a semi-insulating semiconductor. The substrate may be Fe or Cr doped InP or Fe or Cr-doped GaAs. Contacts for the source and drain electrodes are |
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