| Patent Number |
Title Of Patent |
Date Issued |
| 7573113 |
Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method |
August 11, 2009 |
| A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5. |
| 7511354 |
Well for CMOS imager and method of formation |
March 31, 2009 |
| A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second |
| 7420233 |
Photodiode for improved transfer gate leakage |
September 2, 2008 |
| An image sensing circuit and method is disclosed, wherein a photodiode is formed in a substrate through a series of angled implants. The photodiode is formed by a first, second and third implant, wherein at least one of the implants are angled so as to allow the resulting photodiode to e |
| 7226803 |
Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method |
June 5, 2007 |
| A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5. |
| 7196304 |
Row driver for selectively supplying operating power to imager pixel |
March 27, 2007 |
| An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating volt |
| 7190041 |
Well for CMOS imager |
March 13, 2007 |
| A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second |
| 7176434 |
Row driven imager pixel |
February 13, 2007 |
| An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating volt |
| 7122408 |
Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method |
October 17, 2006 |
| A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5. |
| 6897082 |
Method of forming well for CMOS imager |
May 24, 2005 |
| A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second |
