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Inventor:
Matsutera; Hisao
Address:
Tokyo, JP
No. of patents:
10
Patents:












Patent Number Title Of Patent Date Issued
7372673 Magnetoresistive effect transducer having longitudinal bias layer and control layer directly con May 13, 2008
In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to
7126201 Magnetic random access memory October 24, 2006
A technique is provided in which an offset magnetic field of a memory cell of a MRAM is reduced more effectively. The MRAM of the present invention is composed of a free layer (11) which has a reversible free spontaneous magnetization, a fixed layer (6) which has fixed spontaneous ma
7099184 Magnetic random access memory August 29, 2006
An improved magnetic random access memory (MRAM) has two sets of signal lines where each set is substantially perpendicular to the other, and memory cells located at the intersections of the signal lines. Each memory cell has a magneto-resistant element containing a magnetization lay
6950290 Magnetoresistive effect transducer having longitudinal bias layer directly connected to free lay September 27, 2005
In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the
6639766 Magneto-resistance effect type composite head and production method thereof October 28, 2003
A magneto-resistance effect ("MR") type composite head includes a reproduction head with an MR element arranged between a first and a second magnetic shield; and a recording head arranged adjacent to the reproduction head so as to use the second magnetic shield as a first magnetic po
6542342 Magnetoresistive effect transducer having longitudinal bias layer directly connected to free lay April 1, 2003
In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the
6490139 Magneto-resistive element and magnetic head for data writing/reading December 3, 2002
A magneto-resistive element comprises a first electrode, a magneto-resistive layer formed on the first electrode in which resistance is changed in accordance with magnetic field, and a second electrode layer formed on the magneto-resistive layer. The magneto-resistive layer has a fir
6341053 Magnetic tunnel junction elements and their fabrication method January 22, 2002
The present invention provides a magnetic tunnel junction device for an external magnetic field sensor. The device comprises a stack of multi-layers, which include a first antiferromagnetic pinning layer, a ferromagnetic free layer, a tunneling barrier layer, a ferromagnetic pinned l
6333842 Magneto-resistance effect type composite head and production method thereof December 25, 2001
The present invention provides a magneto-resistance effect (hereinafter, referred to as MR) type composite head. The head includes a reproduction head including an MR element arranged between a first and a second magnetic shield; and a recording head arranged next to the reproduction
6174736 Method of fabricating ferromagnetic tunnel junction device January 16, 2001
There is provided a method of fabricating a ferromagnetic tunnel junction device, including the steps of (a) forming a first ferromagnetic layer on a substrate, (b) forming a tunnel barrier layer on the first ferromagnetic layer, (c) forming a second ferromagnetic layer on the tunnel bar










 
 
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