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Matsushita; Takaya
Yokohama, JP
No. of patents:

Patent Number Title Of Patent Date Issued
7943459 Semiconductor device and method of manufacturing the semiconductor device May 17, 2011
A semiconductor device is provided with a conductor wire and a fuse wire formed in an insulating film over a semiconductor substrate, a first under-pad-wire insulating film formed above the insulating film, a second under-pad-wire insulating film formed on the first under-pad-wire in
7232763 Method of manufacturing semiconductor device June 19, 2007
A method of manufacturing a semiconductor device includes subjecting a semiconductor wafer, which includes a copper layer formed above a semiconductor substrate and covered with an insulating film, to a dry etching using a fluorocarbon gas to partially remove the insulating film, the
6627557 Semiconductor device and method for manufacturing the same September 30, 2003
Disclosed is a method of manufacturing a semiconductor device, which comprises the steps of forming an insulating film or a metal film on a surface of a semiconductor substrate, forming at least two kinds of mask on a surface of the insulating film or the metal film, and performing a
5356515 Dry etching method October 18, 1994
A dry etching method which includes supplying a workpiece having an oxide portion or a nitride portion into a processing vessel, keeping said workpiece at temperatures not higher than C. within said processing vessel, supplying an etching gas including a first gas containin
5271788 Plasma processing apparatus December 21, 1993
A magnetron plasma etching apparatus comprises a suscepter serving as an electrode on which a silicon wafer is mounted. A carbon ring having an outer diameter larger than the diameter of the wafer and an electrical resistance lower than that of the wafer, is arranged around the suscepter

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