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Inventor:
Matsushita; Shigeharu
Address:
Katano, JP
No. of patents:
22
Patents:












Patent Number Title Of Patent Date Issued
7933161 Memory device configured to refresh memory cells in a power-down state April 26, 2011
A memory capable of preventing a memory cell from disappearance of data resulting from accumulated disturbances is obtained. This memory comprises a nonvolatile memory cell and a refresh portion for rewriting data in the memory cell. The refresh portion reads data from and rewrites d
7440307 Memory October 21, 2008
This memory comprises a bit line, a first word line and a second word line arranged to intersect with the bit line while holding the bit line therebetween and a first ferroelectric film and a second ferroelectric film, having capacitances different from each other, arranged between the
7420833 Memory September 2, 2008
A memory capable of suppressing disturbance causing disappearance of data in a nonselected memory cell is provided. This memory comprises a memory cell array including a bit line, a word line arranged to intersect with the bit line and memory cells connected between the bit line and the
7379323 Memory with a refresh portion for rewriting data May 27, 2008
This memory comprises a first frequency detecting portion detecting access frequencies with respect to a plurality of memory cell blocks respectively, a comparator comparing the access frequencies with respect to the plurality of memory cell blocks detected by the first frequency det
7366004 Memory April 29, 2008
A memory capable of suppressing reduction of a reading voltage in data reading regardless of dispersion in a manufacturing process is provided. This memory comprises charge storage means, a first field-effect transistor and data determination means. The memory sets a voltage between
7362642 Memory April 22, 2008
A memory allowing reduction of the period of an external access operation is provided. This memory comprises an access control portion performing an internal access operation on the basis of an external access operation, a refresh control portion performing a refresh operation and a
7297559 Method of fabricating memory and memory November 20, 2007
A method of fabricating a memory capable of improving the strength of a signal read from a memory cell is provided. This method of fabricating a memory comprises steps of forming a storage part and an etched thin-film part by partially etching a storage material film formed on a first
7247900 Dielectric device having dielectric film terminated by halogen atoms July 24, 2007
A dielectric device having excellent characteristics is provided. This dielectric device comprises such a first electrode layer that constituent elements located on its surface are terminated by halogen atoms and a dielectric film formed on the surface of the first electrode layer te
7167386 Ferroelectric memory and operating method therefor January 23, 2007
A ferroelectric memory capable of improving disturbance resistance in a non-selected cell by increasing the ratio between voltages applied to ferroelectric capacitors of a selected cell and the non-selected cell respectively is obtained. This ferroelectric memory comprises a bit line,
6977402 Memory device having storage part and thin-film part December 20, 2005
A memory includes a first electrode film, a storage material film formed on the first electrode film, provided with a storage part and a thin-film part having a thickness smaller than a thickness of the storage part and which is at least about 15% of the thickness of the storage part on
6930906 Ferroelectric memory and operating method therefor, and memory device August 16, 2005
A ferroelectric memory capable of improving disturbance resistance in a non-selected memory cell includes a bit line, a word line arranged to intersect with the bit line, and a memory cell, which is arranged between the bit line and the word line an includes a ferroelectric capacitor and
6901002 Ferroelectric memory May 31, 2005
A ferroelectric memory capable of suppressing false data reading or the like by increasing a read margin is obtained. This ferroelectric memory comprises a circuit applying a read voltage V.sub.R to a first electrode and a detector capable of detecting the difference between electric
6891742 Semiconductor memory device May 10, 2005
A semiconductor memory device having a first memory including a bit line, a word line arranged to intersect with the bit line and a storage unit arranged between the bit line and the word line, and a second memory different in type from the first memory. The first memory and the second
6888189 Dielectric element including oxide-based dielectric film and method of fabricating the same May 3, 2005
A dielectric element capable of effectively suppressing diffusion of oxygen into a region located under a lower electrode in heat treatment for sintering an oxide-based dielectric film is obtained. This dielectric element comprises a lower electrode including a first conductor film h
6816398 Memory device November 9, 2004
A memory device capable of improving the degree of integration and effectively preventing false data reading is obtained. This memory device comprises a pair of bit lines extending in a prescribed direction, a word line arranged to intersect with the pair of bit lines and a memory cell,
6785155 Ferroelectric memory and operating method therefor August 31, 2004
A ferroelectric memory capable of avoiding disturbance in non-selected cells is obtained. This ferroelectric memory comprises pulse application means for applying pulses having a prescribed pulse width causing sufficient polarization inversion when applying a high voltage to the ferr
6762476 Dielectric element including oxide dielectric film and method of manufacturing the same July 13, 2004
A dielectric element capable of attaining excellent element characteristics by suppressing an oxide dielectric film from deterioration of characteristics caused by hydrogen is obtained. This dielectric element comprises a lower electrode including a first conductor film containing a
6720096 Dielectric element April 13, 2004
A dielectric element employing an oxide-based dielectric film capable of suppressing oxidation of an electrode or deterioration of film characteristics of the oxide-based dielectric film is obtained. This dielectric element comprises an insulator film including the oxide-based dielec
6100547 Field effect type semiconductor device and method of fabricating the same August 8, 2000
A first electrode layer composed of Pt is formed on an operating layer, and a second electrode layer composed of a material which is different from Pt is formed on the operating layer so as to cover the first electrode layer. A buried electrode layer composed of Pt is formed in the opera
5982023 Semiconductor device and field effect transistor November 9, 1999
A dummy gate is removed together with an SiO.sub.2 film thereon by lift-off to form a reverse dummy-gate pattern with the SiO.sub.2 film. A photoresist pattern is formed to cover the reverse dummy-gate pattern and an SiN protection film therebetween, and a mesa pattern is formed by mesa
5751029 Field-effect semiconductor device having heterojunction May 12, 1998
An undoped Al.sub.0.22 Ga.sub.0.78 As layer, an undoped In.sub.0.2 Ga.sub.0.8 As electron-drifting layer, and an undoped GaAs electron-supplying layer are formed in order on a GaAs substrate. An impurity-doped layer .delta.-doped with Si donor is formed in the GaAs electron-supplying
5650642 Field effect semiconductor device July 22, 1997
A field effect semiconductor device comprises a first channel layer composed of an undoped semiconductor in which electrons mainly drift in low-noise operation and a second channel layer composed of a semiconductor of one conductivity type in which electrons mainly drift in high-power










 
 
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