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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Matsushita; Masashi
Address:
Kyoto, JP
No. of patents:
4
Patents:












Patent Number Title Of Patent Date Issued
7999346 Semiconductor device and method of manufacturing the same August 16, 2011
A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation
7745317 Semiconductor device and method of manufacturing the same June 29, 2010
A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation
7294858 Semiconductor device and method of manufacturing the same November 13, 2007
A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation
7262434 Semiconductor device with a silicon carbide substrate and ohmic metal layer August 28, 2007
A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation










 
 
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