| Patent Number |
Title Of Patent |
Date Issued |
| 7999346 |
Semiconductor device and method of manufacturing the same |
August 16, 2011 |
| A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation |
| 7745317 |
Semiconductor device and method of manufacturing the same |
June 29, 2010 |
| A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation |
| 7294858 |
Semiconductor device and method of manufacturing the same |
November 13, 2007 |
| A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation |
| 7262434 |
Semiconductor device with a silicon carbide substrate and ohmic metal layer |
August 28, 2007 |
| A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation |
