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Inventor: Matsumura; Mitsuo
Address: Kasukabe, JP
No. of patents: 3
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 5017308 |
Silicon thin film and method of producing the same |
May 21, 1991 |
| A silicon thin film is composed of primarily silicon atoms, 0 to 8 atm % hydrogen, at least one element selected from the group including fluorine, chlorine, bromine and iodine, and an impurity element, wherein about 80 to 100% of microcrystalline grains are interspersed in an amorphous |
| 4742012 |
Method of making graded junction containing amorphous semiconductor device |
May 3, 1988 |
| This invention discloses a new semiconductor device having no step type p-i-n juctions but rather has a graded p-i-n juction. The semiconductor device shows a high photoelectric conversion efficiency, and since said device can be produced easily with good reproducibility by a plasma |
| 4726851 |
Amorphous silicon semiconductor film and production process thereof |
February 23, 1988 |
| This invention discloses an amorphous silicon semiconductor film comprising at least hydrogen, nitrogen, and oxygen as impurities and the method of producing it. The film is characterized in that the total quantity of nitrogen and oxygen in said film is at least 1 atom %. Since the film |
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