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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Masuda; Ikuro
Address:
Hitachi, JP
No. of patents:
48
Patents:












Patent Number Title Of Patent Date Issued
5696715 Semiconductor memory device having bipolar and field effect transistors and an improved coupling December 9, 1997
A semiconductor integrated circuit memory device has at least two logic blocks, each logic block including at least two logic units and each logic unit having a number of metal oxide semiconductor field effect transistors (MOS FET's) integrated therein. Bipolar transistors for driving th
5644548 Dynamic random access memory having bipolar and C-MOS transistor July 1, 1997
A dynamic random access memory device is provided having a dynamic memory cell, a word line coupled to the dynamic memory cell, a data line coupled to the dynamic memory cell, a precharge circuit coupled to the data line, a word driver coupled to the word line and a decoder coupled to th
5600268 Gate circuit of combined field-effect and bipolar transistors February 4, 1997
A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar
5512847 BiCMOS tri-state output driver April 30, 1996
In an input level converter for TTL--CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the p
5495183 Level conversion circuitry for a semiconductor integrated circuit February 27, 1996
In an input level converter for TTL--CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the p
5455955 Data processing system with device for arranging instructions October 3, 1995
A data processing system incorporating a main memory for storing instructions and operands and performing data processing in a mode of microprogram control system in response to instructions read out of the main memory. The system translates an instruction word read out of the main m
5378941 Bipolar transistor MOS transistor hybrid semiconductor integrated circuit device January 3, 1995
A high speed and low power consumption semiconductor integrated circuit device has a plurality of internal circuits each including circuit elements for performing a desired circuit operation, a plurality of input circuits for receiving external input signals and supplying the signals to
5371713 Semiconductor integrated circuit December 6, 1994
In order to provide high speed and low power consumption, a semiconductor integrated circuit is constructed to utilize both CMOS elements and bipolar transistors. The bipolar transistors are used in the output portions to take advantage of their speed of operation to allow rapid char
5333282 Semiconductor integrated circuit device with at least one bipolar transistor arranged to provide July 26, 1994
In a semiconductor integrated circuit device having at least two logic blocks each including at least two logic units each having a number of MOS FET's integrated therein, bipolar transistors for driving the MOS FET's are selectively arranged between the logic blocks and/or the logic uni
5311482 Semiconductor integrated circuit May 10, 1994
In order to provide high speed and low power consumption, a semiconductor integrated circuit is constructed to utilize both CMOS elements and bipolar transistors. The bipolar transistors are used in the output portions to take advantage of their speed of operation to allow rapid char
5245224 Level conversion circuitry for a semiconductor integrated circuit September 14, 1993
In an input level converter for TTL-CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the pr
5239212 Gate circuit of combined field-effect and bipolar transistors with an improved discharge arrange August 24, 1993
A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar
5153452 Bipolar-MOS IC with internal voltage generator and LSI device with internal voltage generator October 6, 1992
There are provided a bipolar-MOS IC device smaller than half-micron scale, and a combination of such IC device and external circuits. The IC device has an internal voltage generating circuit for generating an internal power source by using an external power source, the voltage of the
5117382 Semiconductor integrated circuit for performing an arithmetic operation including bipolar and MO May 26, 1992
A semiconductor integrated circuit is provided for performing an arithmetic operation using an arithmetic operation circuit. The integrated circuit includes a read bus for connecting the arithmetic operation circuit with a plurality of registers which store input data and/or output data
5103120 Level conversion circuitry for a semiconductor integrated circuit April 7, 1992
In an input level converter for TTL - CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the
5042010 Semiconductor integrated circuit August 20, 1991
In order to provide high speed and lower power consumption, a semiconductor integrated circuit is constructed to utilize both CMOS elements and bipolar transistors. The bipolar transistors are used in the output portions to take advantage of their speed of operation to allow rapid ch
5005153 Data processor integrated on a semiconductor substrate April 2, 1991
In a semiconductor integrated circuit device having at least two logic blocks each including at least two logic units each having a number of MOS FET's integrated therein, bipolar transistors for driving the MOS FET's are selectively arranged between the logic blocks and/or the logic uni
4983862 Semiconductor integrated circuit with a bi-MOS input circuit for providing input signals to an i January 8, 1991
In an input level converter for TTL - CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the
4924439 Semiconductor integrated circuit May 8, 1990
In order to provide high speed and low power consumption, a semiconductor integrated circuit is constructed to utilize both CMOS elements and bipolar transistors. The bipolar transistors are used in the output portions to take advantage of their speed of operation to allow rapid char
4890017 CMOS-BiCMOS gate circuit December 26, 1989
A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar
4879480 Bicmos gate array November 7, 1989
In an input level converter for TTL - CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the
4860148 Semiconductor integrated circuit device with a protective circuit August 22, 1989
A semiconductor integrated circuit device is provided with an input and/or an output terminal and at least one semiconductor device. The circuit has a resistor provided between the input terminal and/or the output terminal and one of the at least one semiconductor devices and an electron
4858189 Semiconductor integrated circuit August 15, 1989
In order to provide high speed and low power consumption, a semiconductor integrated circuit is constructed to utilize both CMOS elements and bipolar transistors. The bipolar transistors are used in the output portions to take advantage of their speed of operation to allow rapid char
4853560 Logic circuit and semiconductor integrated circuit device capable of operating by different powe August 1, 1989
When a counter-part power supply designator of a first LSI designates that the counter-part power supply voltage of another LSI is a first power supply difference which is the same as the power supply difference of its own, an output circuit control controls an output circuit and the out
4829201 Gate circuit of combined field-effect and bipolar transistors May 9, 1989
A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar
4813020 Semiconductor device March 14, 1989
A composite circuit including a MOS transistor and a bipolar transistor to be driven by the MOS transistors and forming an output stage, a logical inverter circuit connected to an output terminal of the composite circuit to invert the level of the output signal, and a MOS transistor havi
4808850 Composite circuit of bipolar transistors and field effect transistors February 28, 1989
A novel composite circuit comprises a first bipolar transistor with a collector of a first conductivity type connected to a first potential, an emitter of the first conductivity type connected to an output, a second bipolar transistor with a collector of the first conductivity type c
4801983 Schottky diode formed on MOSFET drain January 31, 1989
A unidirectional switching circuit having no charge storage effect for performing a high-speed switching operation is disclosed in which one of the anode and cathode terminals of a Schottky-barrier diode is connected to one of the source and drain terminals of a field effect transistor t
4797583 Level converting circuit for converting voltage levels, including a current amplifying arrangeme January 10, 1989
A level converter for transforming differential input voltages into an output voltage comprises a voltage-current conversion circuit for transforming the differential input voltages into differential currents, a current detection circuit for detecting the differential currents, a cur
4789958 Carry-look-ahead adder including bipolar and MOS transistors December 6, 1988
A carry-look-ahead adder is provided which is implemented as a semiconductor integrated circuit. The integrated circuit includes a bipolar transistor coupled to the output terminal for providing an output indicative of the arithmetic operation. Impedance elements are coupled to the b
4769561 Bipolar transistor-field effect transistor composite circuit September 6, 1988
A bipolar transistor-complementary field effect transistor composite circuit is provided which includes a pair of first and second bipolar transistors each having a collector of a first conductivity type, a base of a second conductivity type and an emitter of a first conductivity type.
4727517 Semiconductor memory with column line voltage sitting circuit February 23, 1988
A semiconductor memory is provided including a plurality of row lines, memory cells driven by selecting a row line, sense amplifiers connected to the memory cells via column lines, and a column line voltage setting circuit for setting a predetermined voltage on the column lines. The
4719373 Gate circuit of combined field-effect and bipolar transistors January 12, 1988
A high-speed operation, low-power consumption gate circuit structure comprises a combination of complementary field-effect-transistors and bipolar transistors and discharge means for discharging accumulated charges from these transistors when the field-effect-transistors and bipolar
4713796 Semiconductor integrated circuit December 15, 1987
In order to provide high speed and low power consumption, a semiconductor integrated circuit is constructed to utilize both CMOS elements and bipolar transistors. The bipolar transistors are used in the output portions to take advantage of their speed of operation to allow rapid char
4701922 Integrated circuit device October 20, 1987
An integrated circuit device comprises combinational circuits and sequential circuits. Each of the sequential circuits is provided with a (common) input control signal terminal for controlling the entry of main input terminal signals into the sequential circuit, a test data input/out
4694203 High speed bi-comos switching circuit September 15, 1987
A bipolar/CMOS mixed type switching circuit comprising two npn-type bipolar transistors Q.sub.1, Q.sub.2 that are connected in the form of a totem pole in the output stage, a CMOS inverter and an NMOSFET M.sub.3 for driving these transistors in a complementary manner, and resistance mean
4694202 Bi-MOS buffer circuit September 15, 1987
An improved buffer circuit is provided having an output stage for driving a load and a driver stage for driving said output stage. The output stage is constituted by a first MOS transistor to avoid problems found in bipolar output transistors which result from the amplitude of the output
4689503 Level conversion circuitry for a semiconductor integrated circuit utilizing bis CMOS circuit ele August 25, 1987
In an input level converter for TTL-CMOS level conversion (or other conversion to CMOS) for an internal logic block operating with CMOS levels, an output transistor for executing the charge or discharge of the output capacitance thereof is formed of a bipolar transistor. Thus, the pr
4678943 Inverting logic buffer BICMOS switching circuit using an enabling switch for three-state operati July 7, 1987
A switching circuit comprises a pre-stage circuit coupled to receive an input signal and an output stage, wherein an output signal having a phase opposite to that of a signal of an input terminal IN can be obtained from an output terminal OUT of the output stage. The pre-stage circuit in
4661723 Composite circuit of bipolar transistors and field effect transistors April 28, 1987
A novel composite circuit comprises a first bipolar transistor with a collector of a first conductivity type connected to a first potential, an emitter of the first conductivity type connected to an output, a second bipolar transistor with a collector of the first conductivity type c
4617648 Semiconductor integrated circuit device October 14, 1986
A semiconductor integrated circuit device provided with a flip-flop circuit including gates which are connected to each other so as to form a closed loop, is disclosed. The device includes: first means for generating a first write timing signal, a second write timing signal, a diagnosis
4613970 Integrated circuit device and method of diagnosing the same September 23, 1986
A method of diagnosing an integrated circuit device having a plurality of combinational circuits, at least one input memory circuit connected to an input side of the combinational circuits, and an output memory circuit connected to an output side of the combinational circuits is disclose
4589007 Semiconductor integrated circuit device May 13, 1986
A semiconductor integrated circuit device is disclosed. A plurality of unit cells, each having at least a basic transistor device formed on one main surface of a semiconductor substrate, are arranged in a line to form a unit cell line. At least two of such unit cell lines are arranged ad
4523276 Input/output control device with memory device for storing variable-length data and method of co June 11, 1985
An input/output control device stores variable-length data in a memory device at a high storage efficiency and without reducing the speed of data processing. The data stored in a memory are read out in the form of data of a fixed word length and then processed, the data having been proce
4500951 Plant control system February 19, 1985
In a plant control system, a transmission channel includes loop transmission lines arranged in duplex. Equivalently connected to this transmission channel are a plurality of one-loop controller stations, a backup station backing up a disabled one of the plural controller stations and
4366478 Signal transmitting and receiving apparatus December 28, 1982
Disclosed is a signal transmitting and receiving apparatus for transmitting and receiving parallel-by-word data signals, converting the parallel-by-word data signal to serial-by-word data signal, and transmitting the serial-by-word data signal to control units connected in a multi-dr
4200225 Diagnostic check system for digital signal circuit April 29, 1980
A diagnostic check system for a digital signal circuit, in which, in a state where a plurality of digital signals are being sent out from a processor such as a microcomputer through an interface and photo-coupling elements to a controlled apparatus, the processor periodically processes
4129901 Plural-sequence control system December 12, 1978
A sequence control system is disclosed which is suitable for control of plural objects to at least some of which similar control sequence operations are performed. In addition to a logical operation unit for receiving signals representative of states of the controlled objects through










 
 
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