A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed
A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed
A process is provided for the formation of a thin film of gate dielectric or similar material on a silicon semiconductor substrate from an organic precursor by atomic layer epitaxy, wherein the organic precursor is introduced to react with the treated surface to form a bonded monolayer o