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Inventor:
Maejima; Hiroshi
Address:
Chigasaki, JP
No. of patents:
43
Patents:












Patent Number Title Of Patent Date Issued
8582361 Three dimensional stacked nonvolatile semiconductor memory November 12, 2013
In a three dimensional stacked nonvolatile semiconductor memory according to the present invention, a first block has a selected first cell unit including a memory cell to be read and a non-selected second cell unit not including a memory cell to be read. A read potential or a transfer
8270218 Semiconductor memory device comprising memory cell having charge accumulation layer and control September 18, 2012
A semiconductor memory device includes a memory cell, a bit line, a source line, and a sense amplifier. The memory cell has a stacked gate including a charge accumulation layer and a control gate. The bit line is electrically connected to a drain of the memory cell. The source line is
8194453 Three dimensional stacked nonvolatile semiconductor memory June 5, 2012
A three dimensional stacked nonvolatile semiconductor memory according to examples of the present invention includes a memory cell array comprised of first and second blocks disposed side by side and a driver disposed between the first and second blocks. At least two conductive layers
8154908 Nonvolatile semiconductor storage device and data writing method therefor April 10, 2012
A nonvolatile semiconductor storage device includes: a first wire and a second wire intersecting each other; a memory cell which is disposed at each intersection of the first wire and the second wire and electrically rewritable and in which a variable resistor for memorizing a resistance
8149611 Nonvolatile semiconductor memory device April 3, 2012
A nonvolatile semiconductor memory device comprises a memory cell array including first and second mutually crossing lines and electrically erasable programmable memory cells arranged at intersections of the first and second lines, each memory cell containing a variable resistor oper
8149606 Semiconductor memory device April 3, 2012
A semiconductor memory device comprises a semiconductor substrate; a plurality of memory cell arrays stacked on the semiconductor substrate, each memory cell array including a plurality of first lines paralleled with each other, a plurality of second lines paralleled with each other
8111536 Semiconductor memory device February 7, 2012
The memory cell array has memory cells each positioned at respective intersections between a plurality of first wirings and a plurality of second wirings. Each of the memory cells has a rectifier element and a variable resistance element connected in series. The resistance element ma
8107292 Three dimensional stacked nonvolatile semiconductor memory January 31, 2012
In a three dimensional stacked nonvolatile semiconductor memory according to the present invention, a first block has a selected first cell unit including a memory cell to be read and a non-selected second cell unit not including a memory cell to be read. A read potential or a transfer
8102711 Three dimensional stacked nonvolatile semiconductor memory January 24, 2012
A three dimensional stacked nonvolatile semiconductor memory according to an example of the present invention includes a memory cell array comprised of first and second blocks. The first block has a first cell unit which includes a memory cell to be programmed and a second cell unit
8094477 Resistance change semiconductor storage device January 10, 2012
A semiconductor storage device includes a memory cell array having memory cells positioned at respective intersections between a plurality of first wirings and a plurality of second wirings, each of the memory cells having a rectifier element and a variable resistance element connected i
8068364 Three dimensional stacked nonvolatile semiconductor memory November 29, 2011
A three dimensional stacked nonvolatile semiconductor memory according to an example of the present invention includes a memory cell array comprised of first and second blocks disposed side by side in a first direction, and a driver disposed on one end of the memory cell array in a s
8064270 Semiconductor integrated circuit device November 22, 2011
A semiconductor integrated circuit device includes a data circuit and a group of bit line application voltage terminals to which different voltages are applied. The data circuit holds program data to be programed into a memory cell and changes the data held according to a verify result
8040709 Semiconductor storage device October 18, 2011
A semiconductor storage device includes: a memory cell array having memory cells positioned at respective intersections between a plurality of first wirings and a plurality of second wirings, each of the memory cells having a rectifier element and a variable resistance element connec
8036010 Semiconductor memory device October 11, 2011
A semiconductor memory device comprises a semiconductor substrate; a plurality of memory cell arrays stacked on the semiconductor substrate, each memory cell array including a plurality of first lines paralleled with each other, a plurality of second lines paralleled with each other
7978497 Nonvolatile semiconductor memory device July 12, 2011
A nonvolatile semiconductor memory device comprises a memory cell array including first and second mutually crossing lines and electrically erasable programmable memory cells arranged at intersections of the first and second lines, each memory cell containing a variable resistive ele
7936586 Nonvolatile semiconductor storage apparatus and data programming method thereof May 3, 2011
The semiconductor storage apparatus includes a memory cell array including memory cells each having a rectifying element and a variable resistive element connected in series, the memory cells being arranged in crossing portions of a plurality of first wires and a plurality of second
7929344 Semiconductor memory device having stacked gate including charge accumulation layer and control April 19, 2011
A semiconductor memory device includes a memory cell, a bit line, a source line, a detection circuit, and a sense amplifier. The memory cell holds or more levels of data. The bit line is electrically connected to a drain of the memory cell. The source line is electrically connected to a
7920421 Semiconductor memory device provided with memory cells having charge storage layer and control g April 5, 2011
A semiconductor memory device includes a memory cell, a source line, and a source line control circuit. The memory cell includes a charge storage layer and a control gate and is capable of holding 2 levels or more levels of data. The source line is electrically connected to a source of
7907436 Nonvolatile semiconductor storage device and data writing method therefor March 15, 2011
A nonvolatile semiconductor storage device includes: a first wire and a second wire intersecting each other; a memory cell which is disposed at each intersection of the first wire and the second wire and electrically rewritable and in which a variable resistor for memorizing a resistance
7898840 Nonvolatile semiconductor memory device March 1, 2011
A nonvolatile semiconductor memory device comprises a memory cell array including first and second mutually crossing lines and electrically erasable programmable memory cells arranged at intersections of the first and second lines, each memory cell containing a variable resistor oper
7876626 Semiconductor memory device and semiconductor memory system January 25, 2011
A semiconductor memory device comprises a memory cell array including a plurality of memory cells arranged at intersections of word lines and bit lines; a read/write circuit operative to execute data read/write to the memory cell; and an operational circuit operative to compare certain
7859902 Three dimensional stacked nonvolatile semiconductor memory December 28, 2010
A three dimensional stacked nonvolatile semiconductor memory according to an example of the present invention includes a memory cell array comprised of first and second blocks. The first block has a first cell unit which includes a memory cell to be programmed and a second cell unit
7852676 Three dimensional stacked nonvolatile semiconductor memory December 14, 2010
In a three dimensional stacked nonvolatile semiconductor memory according to the present invention, a first block has a selected first cell unit including a memory cell to be read and a non-selected second cell unit not including a memory cell to be read. A read potential or a transfer
7852675 Three dimensional stacked nonvolatile semiconductor memory December 14, 2010
A three dimensional stacked nonvolatile semiconductor memory according to an example of the present invention includes a memory cell array comprised of first and second blocks disposed side by side in a first direction, and a driver disposed on one end of the memory cell array in a s
7835181 Semiconductor memory device November 16, 2010
A semiconductor memory device is disclosed, which includes a plurality of NAND cells each comprising a plurality of series-connected memory cell transistors, and a drain-side select transistor and a source-side select transistor connected to a drain-side end and a source-side end of the
7800935 Resistance change memory device September 21, 2010
A resistance change memory device including memory cells arranged, the memory cell having a stable state with a high resistance value and storing in a non-volatile manner such multi-level data that at least three resistance values, R0, R1 and R2 (R0<R1<R2) are selectively set,
7781823 Nonvolatile semiconductor memory August 24, 2010
A nonvolatile semiconductor memory according to the present invention includes memory cell units, which include data select lines formed in parallel to each other, data transfer lines crossing the data select lines and aligned in parallel to each other, and electrically rewritable me
7630261 Nand-structured flash memory December 8, 2009
A NAND-structured flash memory including a selection transistor having a first conducting path, one end of the first conducting path being connected to a bit line or a source line, at least one dummy gate having a second conducting path and a control gate, one end of the second condu
7590004 Nonvolatile semiconductor memory having a plurality of interconnect layers September 15, 2009
A nonvolatile semiconductor memory includes a memory cell array including horizontally aligned memory cell columns, each including vertically arranged memory cell transistors and select transistors selecting the memory cell transistors; first cell well lines connecting well regions in
7560766 Nonvolatile semiconductor memory July 14, 2009
A nonvolatile semiconductor memory according to the present invention includes memory cell units, which include data select lines formed in parallel to each other, data transfer lines crossing the data select lines and aligned in parallel to each other, and electrically rewritable me
7539067 Semiconductor integrated circuit device May 26, 2009
A semiconductor integrated circuit device includes a data circuit and a group of bit line application voltage terminals to which different voltages are applied. The data circuit holds program data to be programmed into a memory cell and changes the data held according to a verify res
7505311 Semiconductor memory device March 17, 2009
A semiconductor memory device includes a memory cell array with electrically rewritable and non-volatile memory cells arranged therein, and a bit line control circuit connected to a bit line of the memory cell array to control and detect the bit line voltage in accordance with operat
7453742 Semiconductor integrated circuit device November 18, 2008
A semiconductor integrated circuit device includes a charge transfer transistor provided between a bit line and a sense amplifier, and a bit line clamp voltage generating circuit which generates bit line clamp voltage to be applied to the gate of the charge transfer transistor. The b
7400534 NAND flash memory and data programming method thereof July 15, 2008
A semiconductor integrated circuit device includes even-numbered bit lines, odd-numbered bit lines, cell source lines, first memory elements electrically connected between the even-numbered bit lines and the cell source lines, and second memory elements electrically connected between
7339227 Nonvolatile semiconductor memory March 4, 2008
A nonvolatile semiconductor memory according to the present invention includes memory cell units, which include data select lines formed in parallel to each other, data transfer lines crossing the data select lines and aligned in parallel to each other, and electrically rewritable me
7286403 Non-volatile semiconductor memory device October 23, 2007
According to one embodiment of this invention, a non-volatile semiconductor memory device of high speed program operation is realized. It provides a non-volatile semiconductor memory device comprising a cell array in which NAND strings having electrically re-programmable memory cells
7274617 Non-volatile semiconductor memory September 25, 2007
A non-volatile semiconductor memory includes: a cell array including a plurality of memory cells arranged in a matrix; a plurality of bit lines extending in a column direction of the matrix; a sense amplifier configured to amplify data read out from the memory cells via the bit lines
7259990 Semiconductor memory device August 21, 2007
A semiconductor memory device is disclosed, which includes a plurality of NAND cells each comprising a plurality of series-connected memory cell transistors, and a drain-side select transistor and a source-side select transistor connected to a drain-side end and a source-side end of the
7259985 Semiconductor memory device August 21, 2007
A semiconductor memory device includes a memory cell array with electrically rewritable and non-volatile memory cells arranged therein, and a bit line control circuit connected to a bit line of the memory cell array to control and detect the bit line voltage in accordance with operat
7239556 NAND-structured flash memory July 3, 2007
A NAND-structured flash memory comprises a memory cell array wherein plural memory strings are arranged in matrix form, each of the memory cell strings including plural nonvolatile memory cells, the first conducting paths of the memory cells being connected in series, at least one of
7145199 Nonvolatile semiconductor memory December 5, 2006
A nonvolatile semiconductor memory according to the present invention includes memory cell units, which include data select lines formed in parallel to each other, data transfer lines crossing the data select lines and aligned in parallel to each other, and electrically rewritable me
7050346 Non-volatile semiconductor memory device and electric device with the same May 23, 2006
A non-volatile semiconductor memory device includes a cell array in which electrically rewritable and non-volatile memory cells are arranged, and a sense amplifier circuit configured to read and write data in association with the cell array, wherein the sense amplifier circuit includes:
6639848 Semiconductor memory device and method for testing the same October 28, 2003
A semiconductor memory device is provided which can apply a redundancy circuit replacement program to cells by a DS testing in a parallel testing state. That is, in this semiconductor memory device, when the redundancy circuit replacement is effected on an electrically programmable n










 
 
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