| Patent Number |
Title Of Patent |
Date Issued |
| 7591923 |
Apparatus and method for use of optical system with a plasma processing system |
September 22, 2009 |
| A plasma processing system and method for operating an optical system in conjunction with a plasma processing system are provided. The plasma processing system includes an optical system in communication with a plasma processing chamber of the plasma processing system. The optical sy |
| 7553427 |
Plasma etching of Cu-containing layers |
June 30, 2009 |
| A method and apparatus are provided for plasma etching of Cu-containing layers in semiconductor devices using an aluminum source in the presence of a halogen-containing plasma. The aluminum source reacts with halogenated Cu-containing surfaces and forms volatile etch products that al |
| 7355171 |
Method and apparatus for process monitoring and control |
April 8, 2008 |
| A method and apparatus for real-time monitoring of a gaseous environment during a semiconductor process. The method utilizes metastable electronic energy transfer to excite and ionize the chamber gaseous effluent and correlates the fluorescence signals from the excited species and mass |
| 7214327 |
Anisotropic dry etching of Cu-containing layers |
May 8, 2007 |
| A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and etching reagents (370) that react with |
| 7202169 |
Method and system for etching high-k dielectric materials |
April 10, 2007 |
| A system and a method to remove a layer of high-k dielectric material during the manufacturing of an integrated circuit. In one embodiment of the invention, an etch reactant is employed to form volatile etch products when reacted with high-k layers. Alternately, high-k layers can be |
| 7102132 |
Process monitoring using infrared optical diagnostics |
September 5, 2006 |
| A method and apparatus for real-time monitoring of the substrate and the gaseous process environment in a semi-conductor process step is described. The method uses infrared spectroscopy for in-situ analysis of gaseous molecular species in the process region and characterization of ad |
| 7064812 |
Method of using a sensor gas to determine erosion level of consumable system components |
June 20, 2006 |
| A method and system are provided for monitoring erosion of system components in a plasma processing system. The system components contain a gas emitter that can release a sensor gas into a plasma process environment. The sensor gas can produce characteristic fluorescent light emissio |
| 6894769 |
Monitoring erosion of system components by optical emission |
May 17, 2005 |
| A method and system are provided for monitoring erosion of system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emission to |
| 6806949 |
Monitoring material buildup on system components by optical emission |
October 19, 2004 |
| A method and system are provided for monitoring material buildup on system components in a plasma processing system. The system components contain emitters that are capable of producing characteristic fluorescent light emission when exposed to a plasma. The method utilizes optical emissi |
| 6586330 |
Method for depositing conformal nitrified tantalum silicide films by thermal CVD |
July 1, 2003 |
| Method for depositing a nitrified tantalum silicide barrier film on a semiconductor device including a silicon-based substrate with recessed features by low temperature thermal CVD of tantalum silicide and subsequent nitrification. The nitrified tantalum silicide barrier film exhibit |
