| Patent Number |
Title Of Patent |
Date Issued |
| 6987658 |
Ionizer |
January 17, 2006 |
| An ionizer for eliminating static electricity on a large size substrate. The ionizer comprises a bar and a plurality of pin sets. The pin sets are located on the bar at a given interval, and a power line is located inside the bar. Each pin set comprises a plurality of pins and a plur |
| 6682039 |
Locator for a material sheet |
January 27, 2004 |
| A locator for a material sheet comprises at least two oppositely disposed stoppers, and a slot sheet. Each of the stoppers provides a flat bearing surface and a slant surface extending outward and upward from the bearing surface with a junction between them. The slot sheet is disposed un |
| 6303939 |
Wafer mapping apparatus |
October 16, 2001 |
| A semiconductor wafer cassette mapper. A photo-detecting array is used as a receiver. During a mapping process, an accurate and complex driving system is not necessary. The invention provides a semiconductor wafer cassette mapper. A strip light source is used as an emitter and a photo-de |
| 6218320 |
Method for improving the uniformity of wafer-to-wafer film thickness |
April 17, 2001 |
| A method for improving the uniformity of wafer-to-wafer film thicknesses. Before depositing films, shower heads in a PECVD system is heated to production temperature to make the entire system (including the shower heads) reach a stable temperature in coordination with heating of a heater |
| 6211060 |
Method for planarizing a damascene structure |
April 3, 2001 |
| A method for planarizing a damascence structure, comprises using two polishing procedure to remove the redundant metal layer. The method comprises depositing a dielectric layer over a wafer. A photolithography and etching procedure is then performed to form trenchs on the dielectric |
| 6210754 |
Method of adjusting for parallel alignment between a shower head and a heater platform in a cham |
April 3, 2001 |
| A method is proposed for use in a chamber used in IC fabrication to adjust for parallel alignment between a shower head and a heater platform in the chamber, so that later the deposition process performed in the chamber can result in an evenly deposited layer on the wafer. This method is |
