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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Lu; Jun
Address:
Beverly, MA
No. of patents:
5
Patents:












Patent Number Title Of Patent Date Issued
8129695 System and method for controlling deflection of a charged particle beam within a graded electros March 6, 2012
A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/deceleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control
7166854 Uniformity control multiple tilt axes, rotating wafer and variable scan velocity January 23, 2007
A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially untuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed or
7161161 Uniformity control using multiple fixed wafer orientations and variable scan velocity January 9, 2007
A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially un-tuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed o
6207964 Continuously variable aperture for high-energy ion implanter March 27, 2001
A variable aperture assembly (30) is provided for controlling the amount of ion beam current passing therethrough in an ion implantation system (10). The aperture assembly (30) comprises an aperture (44) defined by opposing first and second aperture plates (44A, 44B) through which an ion
6194734 Method and system for operating a variable aperture in an ion implanter February 27, 2001
A system and method are provided for operating a variable aperture (30) for adjusting the amount of ion beam current passing therethrough in an ion implantation system (10). The system and method comprise means or steps for (i) measuring ion beam current at an implanter location using a










 
 
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