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Inventor: Lorenz; Anne
Address: Leuven, BE
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 8062931 |
Surface treatment and passivation of AlGaN/GaN HEMT |
November 22, 2011 |
| In the preferred embodiments, a method to reduce gate leakage and dispersion of group III-nitride field effect devices covered with a thin in-situ SiN layer is provided. This can be obtained by introducing a second passivation layer on top of the in-situ SiN-layer, in combination wit |
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