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Inventor:
Lorenz; Anne
Address:
Leuven, BE
No. of patents:
1
Patents:












Patent Number Title Of Patent Date Issued
8062931 Surface treatment and passivation of AlGaN/GaN HEMT November 22, 2011
In the preferred embodiments, a method to reduce gate leakage and dispersion of group III-nitride field effect devices covered with a thin in-situ SiN layer is provided. This can be obtained by introducing a second passivation layer on top of the in-situ SiN-layer, in combination wit










 
 
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